Volz, K. ; Kiuchi, M. ; Okumura, M. ; Ensinger, W. (2000)
C–SiC–Si gradient films formed on silicon by ion beam assisted deposition at room temperature.
In: Surface and Coatings Technology, (128-129)
doi: 10.1016/S0257-8972(00)00604-6
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Ion beam assisted deposition (IBAD) of carbon under medium energy (35 keV) Ar ion bombardment onto a silicon target results in the formation of silicon carbide. The formation of a-C–SiC–Si gradient films is dependent on the ion/atom arrival ratio (I/A). All films are deposited at room temperature. The gradient layers formed are examined for their composition using RBS. Depending on the I/A ratios, mixed interfaces of different widths, where silicon carbide exists, are formed. The SiC bonding in the mixed region is proven by XPS. The film formed on top of some samples contains amorphous carbon regions as shown by Raman spectroscopy. The surface of the layers grown is rather smooth with a roughness of several nanometres.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2000 |
| Autor(en): | Volz, K. ; Kiuchi, M. ; Okumura, M. ; Ensinger, W. |
| Art des Eintrags: | Bibliographie |
| Titel: | C–SiC–Si gradient films formed on silicon by ion beam assisted deposition at room temperature |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Juni 2000 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Surface and Coatings Technology |
| (Heft-)Nummer: | 128-129 |
| DOI: | 10.1016/S0257-8972(00)00604-6 |
| Kurzbeschreibung (Abstract): | Ion beam assisted deposition (IBAD) of carbon under medium energy (35 keV) Ar ion bombardment onto a silicon target results in the formation of silicon carbide. The formation of a-C–SiC–Si gradient films is dependent on the ion/atom arrival ratio (I/A). All films are deposited at room temperature. The gradient layers formed are examined for their composition using RBS. Depending on the I/A ratios, mixed interfaces of different widths, where silicon carbide exists, are formed. The SiC bonding in the mixed region is proven by XPS. The film formed on top of some samples contains amorphous carbon regions as shown by Raman spectroscopy. The surface of the layers grown is rather smooth with a roughness of several nanometres. |
| Freie Schlagworte: | Ion beam assisted deposition, Silicon carbide, Amorphous carbon, Gradient films |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik |
| Hinterlegungsdatum: | 25 Jun 2012 11:15 |
| Letzte Änderung: | 30 Aug 2018 12:50 |
| PPN: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum