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Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases

Volz, K. and Baba, K. and Hatada, R. and Ensinger, W. (2001):
Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases.
In: Surface & coatings technology, pp. 197-201, 136, (1-3), ISSN 0257-8972, [Online-Edition: http://dx.doi.org/10.1016/S0257-8972(00)01055-0],
[Article]

Abstract

In the present study a comparison of two different hydrocarbon precursor gases, namely methane and toluene, on the formation of silicon carbide (SiC) and amorphous carbon (a-C:H) films by plasma immersion ion implantation (PIII) of silicon is made. The samples are analyzed by using Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS) for their element composition. XPS and Raman spectroscopy are applied to determine the bonding of silicon and carbon. Depending on the number of high voltage pulses the samples have been treated with, which corresponds to the ion fluence, it is possible to form stoichiometric SiC films without C layers on top of the wafers if methane is used as plasma forming species. For the same process conditions, CH4 PIII always results in thicker SiC and thinner a-C:H films compared with C7H8 PIII. SiC bond formation is proven by XPS. Raman spectroscopy shows the formation of a-C:H films for high pulse numbers for the case of a methane plasma, but already for small pulse numbers if toluene is used for plasma forming species.

Item Type: Article
Erschienen: 2001
Creators: Volz, K. and Baba, K. and Hatada, R. and Ensinger, W.
Title: Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases
Language: English
Abstract:

In the present study a comparison of two different hydrocarbon precursor gases, namely methane and toluene, on the formation of silicon carbide (SiC) and amorphous carbon (a-C:H) films by plasma immersion ion implantation (PIII) of silicon is made. The samples are analyzed by using Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS) for their element composition. XPS and Raman spectroscopy are applied to determine the bonding of silicon and carbon. Depending on the number of high voltage pulses the samples have been treated with, which corresponds to the ion fluence, it is possible to form stoichiometric SiC films without C layers on top of the wafers if methane is used as plasma forming species. For the same process conditions, CH4 PIII always results in thicker SiC and thinner a-C:H films compared with C7H8 PIII. SiC bond formation is proven by XPS. Raman spectroscopy shows the formation of a-C:H films for high pulse numbers for the case of a methane plasma, but already for small pulse numbers if toluene is used for plasma forming species.

Journal or Publication Title: Surface & coatings technology
Volume: 136
Number: 1-3
Uncontrolled Keywords: Silicon carbide; Amorphous carbon; Plasma immersion ion implantation; Methane; Toluene
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 26 Jun 2012 07:53
Official URL: http://dx.doi.org/10.1016/S0257-8972(00)01055-0
Identification Number: doi:10.1016/S0257-8972(00)01055-0
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