Ensinger, W. ; Volz, K. ; Kiuchi, M. (2000)
Ion beam-assisted deposition of nitrides of the 4th group of transition metals.
In: Surface and Coatings Technology, (128-129)
doi: 10.1016/S0257-8972(00)00662-9
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The nitrides of the reactive transition metals of the 4th group (Ti, Zr, Hf) exhibit a number of technologically interesting properties such as high melting points, high hardness, chemical inertness, and decorative appearence. They can be formed by ion beam-assisted deposition at substrates held at room temperature. The nitrides were deposited on silicon by electron beam evaporation of the respective metal under nitrogen ion bombardment with medium to high ion energies (10–30 keV). X-Ray photo electron spectrometry showed that the metals tend to incoporate large amounts of oxygen. This can be reduced by intense ion irradiation. By X-ray diffraction measurements phase formation was determined as a function of the ion-to-atom arrival ratio. The grains show a preferential (100) crystal orientation. The formation of this texture depends on the ion-to-atom arrival ratio and on the metal atomic mass. The films grow in columns which are composed of small crystallites.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2000 |
| Autor(en): | Ensinger, W. ; Volz, K. ; Kiuchi, M. |
| Art des Eintrags: | Bibliographie |
| Titel: | Ion beam-assisted deposition of nitrides of the 4th group of transition metals |
| Sprache: | Englisch |
| Publikationsjahr: | 1 Juni 2000 |
| Verlag: | Elsevier |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Surface and Coatings Technology |
| (Heft-)Nummer: | 128-129 |
| DOI: | 10.1016/S0257-8972(00)00662-9 |
| Kurzbeschreibung (Abstract): | The nitrides of the reactive transition metals of the 4th group (Ti, Zr, Hf) exhibit a number of technologically interesting properties such as high melting points, high hardness, chemical inertness, and decorative appearence. They can be formed by ion beam-assisted deposition at substrates held at room temperature. The nitrides were deposited on silicon by electron beam evaporation of the respective metal under nitrogen ion bombardment with medium to high ion energies (10–30 keV). X-Ray photo electron spectrometry showed that the metals tend to incoporate large amounts of oxygen. This can be reduced by intense ion irradiation. By X-ray diffraction measurements phase formation was determined as a function of the ion-to-atom arrival ratio. The grains show a preferential (100) crystal orientation. The formation of this texture depends on the ion-to-atom arrival ratio and on the metal atomic mass. The films grow in columns which are composed of small crystallites. |
| Freie Schlagworte: | Ion beam-assisted deposition, Titanium nitride, Hafnium nitride, Zirconium nitride |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Materialanalytik |
| Hinterlegungsdatum: | 25 Jun 2012 11:24 |
| Letzte Änderung: | 30 Aug 2018 12:51 |
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