TU Darmstadt / ULB / TUbiblio

Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation

Volz, K. and Klatt, Ch. and Ensinger, W. (2001):
Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, pp. 569-574, (175-177), ISSN 0168-583X, [Online-Edition: http://dx.doi.org/10.1016/S0168-583X(00)00629-7],
[Article]

Abstract

Thin SiC films in Si are formed by pulse biasing a Si wafer to a high voltage in a methane (CH4) RF plasma (plasma immersion ion implantation, PIII). The composition and structure of the resulting layers in dependence on the preparation conditions – mainly the implantation temperature – are elucidated by means of Rutherford backscattering spectrometry (RBS), nuclear resonance analysis (NRA) for hydrogen depth profiling and transmission electron diffraction (TED). It is shown that by using PIII all C/Si ratios from 0 to 1/0 can be obtained. The hydrogen, which is implanted from the precursor gas as well, has a depth profile, which is not a typical implantation profile. Rather, the hydrogen depth profile is chemically governed by the carbon depth distribution. SiC with its stoichiometry close to unity can trap by far the most hydrogen. Increasing or lowering the C/Si ratio results in a decreasing trapping possibility for hydrogen. The hydrogen depth profile for SiC films also depends strongly on the implantation temperature. Films without hydrogen contamination can be grown at 850°C. TED shows that these films grow heteroepitaxially aligned with the Si matrix.

Item Type: Article
Erschienen: 2001
Creators: Volz, K. and Klatt, Ch. and Ensinger, W.
Title: Heteroepitaxial SiC films grown in Si by CH4 plasma immersion ion implantation: Conditions and mechanisms of their formation
Language: English
Abstract:

Thin SiC films in Si are formed by pulse biasing a Si wafer to a high voltage in a methane (CH4) RF plasma (plasma immersion ion implantation, PIII). The composition and structure of the resulting layers in dependence on the preparation conditions – mainly the implantation temperature – are elucidated by means of Rutherford backscattering spectrometry (RBS), nuclear resonance analysis (NRA) for hydrogen depth profiling and transmission electron diffraction (TED). It is shown that by using PIII all C/Si ratios from 0 to 1/0 can be obtained. The hydrogen, which is implanted from the precursor gas as well, has a depth profile, which is not a typical implantation profile. Rather, the hydrogen depth profile is chemically governed by the carbon depth distribution. SiC with its stoichiometry close to unity can trap by far the most hydrogen. Increasing or lowering the C/Si ratio results in a decreasing trapping possibility for hydrogen. The hydrogen depth profile for SiC films also depends strongly on the implantation temperature. Films without hydrogen contamination can be grown at 850°C. TED shows that these films grow heteroepitaxially aligned with the Si matrix.

Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Number: 175-177
Uncontrolled Keywords: Silicon carbide, Heteroepitaxy, Plasma immersion ion implantation, Nuclear resonance analysis, Transmission electron diffraction
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Material Analytics
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 26 Jun 2012 07:32
Official URL: http://dx.doi.org/10.1016/S0168-583X(00)00629-7
Identification Number: doi:10.1016/S0168-583X(00)00629-7
Export:

Optionen (nur für Redakteure)

View Item View Item