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The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring

Miao, Jianmin and Tiginyanu, and Hartnagel, (1997):
The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring.
In: Applied physics letters. 70 (1997), No. 7, [Article]

Item Type: Article
Erschienen: 1997
Creators: Miao, Jianmin and Tiginyanu, and Hartnagel,
Title: The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring
Language: English
Journal or Publication Title: Applied physics letters. 70 (1997), No. 7
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 15:55
License: [undefiniert]
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