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Number of items: 6.

Article

Sharath, S. U. and Vogel, S. and Molina-Luna, Leopoldo and Hildebrandt, Erwin and Kurian, J. and Duerrschnabel, Michael and Nierman, G. and Niu, G. and Calka, P. and Lehmann, M. and Kleebe, Hans-Joachim and Wenger, C. and Schroeder, T. and Alff, Lambert (2017):
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, Wiley-VCH Verlag GmbH, Weinheim, p. 1700432, 27, DOI: 10.1002/adfm.201700432,
[Article]

Niu, G. and Schubert, M. A. and Sharath, S. U. and Zaumseil, P. and Vogel, S. and Wenger, C. and Hildebrandt, E. and Bhupathi, S. and Perez, E. and Alff, L. and Lehmann, M. and Schroeder, T. and Niermann, T. (2017):
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, IOP Science Publishing, p. 215702, 28, (21), ISSN 0957-4484,
[Online-Edition: http://doi.org/10.1088/1361-6528/aa6cd9],
[Article]

Niu, G. and Schubert, M. A. and Sharath, S. U. and Zaumseil, P. and Vogel, S. and Wenger, C. and Hildebrandt, E. and Bhupathi, S. and Perez, E. and Alff, L. and Lehmann, M. and Schroeder, T. and Niermann, T. (2017):
Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, IOP Publishing, p. 215702, 28, (21), ISSN 0957-4484,
DOI: 10.1088/1361-6528/aa6cd9,
[Online-Edition: https://doi.org/10.1088/1361-6528/aa6cd9],
[Article]

Sharath, S. U. and Joseph, M. J. and Vogel, S. and Hildebrandt, E. and Komissinskiy, P. and Kurian, J. and Schroeder, T. and Alff, L. (2016):
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM.
In: Applied Physics Letters, AIP Publishing, p. 173503, 109, (17), ISSN 0003-6951,
[Online-Edition: http://doi.org/10.1063/1.4965872],
[Article]

Sharath, S. U. and Bertaud, T. and Kurian, J. and Hildebrandt, E. and Walczyk, C. and Calka, P. and Zaumseil, P. and Sowinska, M. and Walczyk, D. and Gloskovskii, A. and Schroeder, T. and Alff, L. (2014):
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, AIP Publishing LLC, pp. 063502, 104, (6), ISSN 0003-6951,
[Online-Edition: http://dx.doi.org/10.1063/1.4864653],
[Article]

Sharath, S. U. and Kurian, J. and Komissinskiy, P. and Hildebrandt, E. and Bertaud, T. and Walczyk, C. and Calka, P. and Schroeder, T. and Alff, L. (2014):
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, AIP Publishing LLC, pp. 073505, 105, (7), ISSN 0003-6951,
[Online-Edition: http://dx.doi.org/10.1063/1.4893605],
[Article]

This list was generated on Sat Jul 20 00:20:35 2019 CEST.