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Number of items: 6.

Sharath, S. U. ; Vogel, S. ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Kurian, J. ; Duerrschnabel, Michael ; Nierman, G. ; Niu, G. ; Calka, P. ; Lehmann, M. ; Kleebe, Hans-Joachim ; Wenger, C. ; Schroeder, T. ; Alff, Lambert (2017):
Control of switching modes and conductance quantization via oxygen engineering in HfOx based memristive devices.
In: Advanced Functional Materirials, 27, p. 1700432. Wiley-VCH Verlag GmbH, Weinheim, DOI: 10.1002/adfm.201700432,
[Article]

Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017):
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21), p. 215702. IOP Science Publishing, ISSN 0957-4484,
[Article]

Niu, G. ; Schubert, M. A. ; Sharath, S. U. ; Zaumseil, P. ; Vogel, S. ; Wenger, C. ; Hildebrandt, E. ; Bhupathi, S. ; Perez, E. ; Alff, L. ; Lehmann, M. ; Schroeder, T. ; Niermann, T. (2017):
Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties.
In: Nanotechnology, 28 (21), p. 215702. IOP Publishing, ISSN 0957-4484,
DOI: 10.1088/1361-6528/aa6cd9,
[Article]

Sharath, S. U. ; Joseph, M. J. ; Vogel, S. ; Hildebrandt, E. ; Komissinskiy, P. ; Kurian, J. ; Schroeder, T. ; Alff, L. (2016):
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM.
In: Applied Physics Letters, 109 (17), p. 173503. AIP Publishing, ISSN 0003-6951,
[Article]

Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L. (2014):
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, 104 (6), pp. 063502. AIP Publishing LLC, ISSN 0003-6951,
[Article]

Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Hildebrandt, E. ; Bertaud, T. ; Walczyk, C. ; Calka, P. ; Schroeder, T. ; Alff, L. (2014):
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, 105 (7), pp. 073505. AIP Publishing LLC, ISSN 0003-6951,
[Article]

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