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Group by: No Grouping | Item Type | Date | Language
Number of items: 4.

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2009)
Complementary Metal Oxide Semiconductor Integration of Epitaxial Gd2O3.
In: Journal of Vacuum Science & Technology B, 27 (1)
Article, Bibliographie

Lemme, M. C. ; Gottlob, H. D. B. ; Echtermeyer, T. ; Kurz, H. ; Endres, Ralf ; Schwalke, Udo ; Czernohorsky, M. ; Osten, H. J. (2008)
CMOS Integration of Epitaxial Gd2O3.
15th Workshop on Dielectrics in Microelectronics (WoDiM). Bad Saarow, Deutschland (23.-25.06.2008)
Conference or Workshop Item, Bibliographie

Hurley, P. K. ; Pijolat, M. ; Cherkaoui, K. ; O'Connor, E. ; O'Connell, D. ; Negara, M. A. ; Lemme, M. C. ; Gottlob, D. B. ; Schmidt, M. ; Stegmaier, K. ; Schwalke, Udo ; Hall, S. ; Buiu, O. ; Engstrom, O. ; Newcomb, S. B. (2007)
The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi Formation.
In: ECS Transactions, 11 (4)
Article, Bibliographie

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005)
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23)
Article, Bibliographie

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