Komaragiri, Rama Subrahmanyam (2006)
A Simulation Study on the Performance Improvement of CMOS Devices Using Alternative Gate Electrode Structures.
Technische Universität Darmstadt
Dissertation, Erstveröffentlichung

Gottlob, H. D. B. ; Lemme, M. C. ; Mollenhauer, T. ; Wahlbrink, T. ; Efavi, J. K. ; Kurz, H. ; Stefanov, Yordan ; Haberle, Klaus ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Zaunert, Florian ; Schwalke, Udo (2005)
Introduction of Crystalline High-k Gate Dielectrics in a CMOS Process.
In: Journal of Non-Crystalline Solids, 351 (21-23)
Artikel, Bibliographie

Komaragiri, Rama Subrahmanyam ; Zaunert, Florian ; Schwalke, Udo (2004)
Gate Engineering for High-K Dielectric and Ultra-thin Gate Oxide CMOS.
11th Annual Workshop on Semiconductor Advances for Future Electronics (SAFE). Veldhoven, Niederlande (24.11.2004-25.11.2004)
Konferenzveröffentlichung, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Schwalke, Udo (2004)
Device Level and Nanoscale Electrical Characterization of Crystalline Praseodymium Oxide High-k Gate Dielectric MOSFETs.
In: Proceedings of the SEMATECH International Workshop on Electrical Characterization and Reliability for High-K Devices
Artikel, Bibliographie

Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino ; Schwalke, Udo (2004)
Electrical AFM Measurements for STI CMP Erosion Evaluation.
In: Nanoscale International Conference: Abstracts
Artikel, Bibliographie

Schwalke, Udo ; Stefanov, Yordan ; Komaragiri, Rama Subrahmanyam ; Ruland, Tino (2003)
Electrical Characterisation of Crystalline Praseodymium Oxide High-K Gate Dielectric MOSFETs.
In: Proceedings of the 33rd European Solid State Device Research Conference (ESSDERC)
Artikel, Bibliographie

Komaragiri, Rama Subrahmanyam ; Schwalke, Udo ; Stefanov, Yordan ; Ruland, Tino (2003)
Comparison of Praseodymium Oxide Gate MOSFETs with Conventional SiO2 MOSFETs: A Simulation Study.
In: Proceedings of the International Workshop on Physics of Semiconductor Devices (IWPSD)
Artikel, Bibliographie