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Oxide thickness-dependent resistive switching characteristics of Cu/HfO2/Pt ECM devices.
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Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.
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Enhanced Conductivity and Microstructure in Highly Textured TiN1−x/c‑Al2O3 Thin Films.
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Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks. (Publisher's Version)
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Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties.
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Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
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Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy.
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Zintler, Alexander ; Eilhardt, Robert ; Wang, Shuai ; Krajnak, Matus ; Schramowski, Patrick ; Stammer, Wolfgang ; Petzold, Stefan ; Kaiser, Nico ; Kerstling, Kristian ; Alff, Lambert ; Molina-Luna, Leopoldo (2020):
Machine Learning Assisted Pattern Matching: Insight into Oxide Electronic Device Performance by Phase Determination in 4D-STEM Datasets.
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Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier.
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Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy.
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Correlation of Structural Modifications by Multiscale Phase Mapping in Filamentary Type HfO2-based RRAM: Towards a Component Specific in situ TEM Investigation.
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