Lederer, Maximilian ; Vogel, Tobias ; Kämpfe, Thomas ; Kaiser, Nico ; Piros, Eszter ; Olivo, Ricardo ; Ali, Tarek ; Petzold, Stefan ; Lehninger, David ; Trautmann, Christina ; Alff, Lambert ; Seidel, Konrad (2022)
Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia.
In: Journal of Applied Physics, 132 (6)
doi: 10.1063/5.0098953
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of hafnium oxide based electronics in space or other high-dose environments requires an understanding of how these devices respond to highly ionizing radiation. Here, the effect of 1.6 GeV Au ion irradiation on these devices is explored, revealing a reversible phase transition, as well as a grain fragmentation process. The collected data demonstrate that non-volatile memory devices based on ferroelectric hafnia layers are ideal for applications where excellent radiation hardness is mandatory.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2022 |
| Autor(en): | Lederer, Maximilian ; Vogel, Tobias ; Kämpfe, Thomas ; Kaiser, Nico ; Piros, Eszter ; Olivo, Ricardo ; Ali, Tarek ; Petzold, Stefan ; Lehninger, David ; Trautmann, Christina ; Alff, Lambert ; Seidel, Konrad |
| Art des Eintrags: | Bibliographie |
| Titel: | Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia |
| Sprache: | Englisch |
| Publikationsjahr: | 14 August 2022 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 132 |
| (Heft-)Nummer: | 6 |
| DOI: | 10.1063/5.0098953 |
| Kurzbeschreibung (Abstract): | The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of hafnium oxide based electronics in space or other high-dose environments requires an understanding of how these devices respond to highly ionizing radiation. Here, the effect of 1.6 GeV Au ion irradiation on these devices is explored, revealing a reversible phase transition, as well as a grain fragmentation process. The collected data demonstrate that non-volatile memory devices based on ferroelectric hafnia layers are ideal for applications where excellent radiation hardness is mandatory. |
| Zusätzliche Informationen: | Artikel-ID: 064102 |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Ionenstrahlmodifizierte Materialien |
| Hinterlegungsdatum: | 27 Feb 2024 06:01 |
| Letzte Änderung: | 27 Feb 2024 07:51 |
| PPN: | 515826030 |
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