Winkler, Robert ; Zintler, Alexander ; Recalde-Benitez, Oscar ; Jiang, Tianshu ; Nasiou, Déspina ; Adabifiroozjaei, Esmaeil ; Schreyer, Philipp ; Kim, Taewook ; Piros, Eszter ; Kaiser, Nico ; Vogel, Tobias ; Petzold, Stefan ; Alff, Lambert ; Molina-Luna, Leopoldo (2024)
Texture transfer in dielectric layers via nanocrystalline networks: insights from in situ 4D-STEM.
In: Nano Letters
doi: 10.1021/acs.nanolett.3c03941
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
Transition metal oxide dielectric layers have emerged as promising candidates for various relevant applications, such as supercapacitors or memory applications. However, the performance and reliability of these devices can critically depend on their microstructure, which can be strongly influenced by thermal processing and substrate-induced strain. To gain a more in-depth understanding of the microstructural changes, we conducted in situ transmission electron microscopy (TEM) studies of amorphous HfO2 dielectric layers grown on highly textured (111) substrates. Our results indicate that the minimum required phase transition temperature is 180 °C and that the developed crystallinity is affected by texture transfer. Using in situ TEM and 4D-STEM can provide valuable insights into the fundamental mechanisms underlying the microstructural evolution of dielectric layers and could pave the way for the development of more reliable and efficient devices for future applications.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2024 |
| Autor(en): | Winkler, Robert ; Zintler, Alexander ; Recalde-Benitez, Oscar ; Jiang, Tianshu ; Nasiou, Déspina ; Adabifiroozjaei, Esmaeil ; Schreyer, Philipp ; Kim, Taewook ; Piros, Eszter ; Kaiser, Nico ; Vogel, Tobias ; Petzold, Stefan ; Alff, Lambert ; Molina-Luna, Leopoldo |
| Art des Eintrags: | Bibliographie |
| Titel: | Texture transfer in dielectric layers via nanocrystalline networks: insights from in situ 4D-STEM |
| Sprache: | Englisch |
| Publikationsjahr: | 6 Februar 2024 |
| Verlag: | American Chemical Society |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Nano Letters |
| DOI: | 10.1021/acs.nanolett.3c03941 |
| Kurzbeschreibung (Abstract): | Transition metal oxide dielectric layers have emerged as promising candidates for various relevant applications, such as supercapacitors or memory applications. However, the performance and reliability of these devices can critically depend on their microstructure, which can be strongly influenced by thermal processing and substrate-induced strain. To gain a more in-depth understanding of the microstructural changes, we conducted in situ transmission electron microscopy (TEM) studies of amorphous HfO2 dielectric layers grown on highly textured (111) substrates. Our results indicate that the minimum required phase transition temperature is 180 °C and that the developed crystallinity is affected by texture transfer. Using in situ TEM and 4D-STEM can provide valuable insights into the fundamental mechanisms underlying the microstructural evolution of dielectric layers and could pave the way for the development of more reliable and efficient devices for future applications. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Elektronenmikroskopie 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten |
| Hinterlegungsdatum: | 08 Feb 2024 06:28 |
| Letzte Änderung: | 08 Feb 2024 07:06 |
| PPN: | 515338168 |
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