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Group by: No Grouping | Item Type | Date | Language
Number of items: 7.

Article

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wengerter, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020):
Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11), p. 2070044. Wiley, ISSN 2199160X,
DOI: 10.1002/aelm.202070044,
[Article]

Piros, Eszter ; Lonsky, Martin ; Petzold, Stefan ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert (2020):
Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy.
In: Physical Review Applied, 14 (3), pp. 034029. American Physical Society, ISSN 2331-7019,
DOI: 10.1103/PhysRevApplied.14.034029,
[Article]

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguir, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 2020, Wiley, ISSN 2199160X,
DOI: 10.1002/aelm.202000439,
[Article]

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin‐Nicolle, Christelle ; Wenger, Christian ; Molina‐Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11), p. 2000439. Wiley, ISSN 2199-160X,
DOI: 10.1002/aelm.202000439,
[Article]

Piros, Eszter ; Petzold, Stefan ; Zintler, Alexander ; Kaiser, Nico ; Vogel, Tobias ; Eilhardt, Robert ; Wenger, Christian ; Molina-Luna, Leopoldo ; Alff, Lambert (2020):
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier.
In: Applied Physics Letters, 117 (1), pp. 013504. American Institute of Physics, ISSN 0003-6951,
DOI: 10.1063/5.0009645,
[Article]

Piros, Eszter ; Lonsky, Martin ; Petzold, Martin ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert (2020):
Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy.
In: Physical Review Applied, APS Publishing, ISSN 2331-7019,
[Article]

Wissel, Kerstin ; Vogel, Tobias ; Dasgupta, Supratik ; Fortes, Andrew Dominic ; Slater, Peter R. ; Clemens, Oliver (2020):
Topochemical Fluorination of n = 2 Ruddlesden–Popper Type Sr3Ti2O7 to Sr3Ti2O5F4 and Its Reductive Defluorination.
In: Inorganic Chemistry, 59 (2), pp. 1153-1163. American Chemical Society, ISSN 0020-1669,
DOI: 10.1021/acs.inorgchem.9b02783,
[Article]

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