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Number of items: 8.

English

Piros, Eszter ; Lonsky, Martin ; Petzold, Stefan ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert (2020):
Role of Oxygen Defects in Conductive-Filament Formation in Y2O3 -Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy.
In: Physical Review Applied, 14 (3), pp. 034029. American Physical Society, ISSN 2331-7019,
DOI: 10.1103/PhysRevApplied.14.034029,
[Article]

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguir, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 2020, Wiley, ISSN 2199160X,
DOI: 10.1002/aelm.202000439,
[Article]

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin‐Nicolle, Christelle ; Wenger, Christian ; Molina‐Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020):
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11), p. 2000439. Wiley, ISSN 2199-160X,
DOI: 10.1002/aelm.202000439,
[Article]

Piros, Eszter ; Petzold, Stefan ; Zintler, Alexander ; Kaiser, Nico ; Vogel, Tobias ; Eilhardt, Robert ; Wenger, Christian ; Molina-Luna, Leopoldo ; Alff, Lambert (2020):
Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier.
In: Applied Physics Letters, 117 (1), pp. 013504. American Institute of Physics, ISSN 0003-6951,
DOI: 10.1063/5.0009645,
[Article]

Piros, Eszter ; Lonsky, Martin ; Petzold, Martin ; Zintler, Alexander ; Sharath, S.U. ; Vogel, Tobias ; Kaiser, Nico ; Eilhardt, Robert ; Molina-Luna, Leopoldo ; Wenger, Christian ; Müller, Jens ; Alff, Lambert (2020):
Role of oxygen defects in forming conductive filaments in Y2O3-based analog RRAM devices as revealed by fluctuation spectroscopy.
In: Physical Review Applied, APS Publishing, ISSN 2331-7019,
[Article]

Niu, Gang ; Calka, Pauline ; Huang, Peng ; Sharath, Sankaramangalam Ulhas ; Petzold, Stefan ; Gloskovskii, Andrei ; Fröhlich, Karol ; Zhao, Yudi ; Kang, Jinfeng ; Schubert, Markus Andreas ; Bärwolf, Florian ; Ren, Wei ; Ye, Zuo-Guang ; Perez, Eduardo ; Wenger, Christian ; Alff, Lambert ; Schroeder, Thomas (2019):
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy.
In: Materials Research Letters, 7 (3), pp. 117-123. Taylor & Francis Inc., Philadelphia, PA, USA, ISSN 2166-3831,
DOI: 10.1080/21663831.2018.1561535,
[Article]

Sharath, Sankaramangalam Ulhas ; Vogel, Stefan ; Molina-Luna, Leopoldo ; Hildebrandt, Erwin ; Wenger, Christian ; Kurian, Jose ; Duerrschnabel, Michael ; Niermann, Tore ; Niu, Gang ; Calka, Pauline ; Lehmann, Michael ; Kleebe, Hans-Joachim ; Schroeder, Thomas ; Alff, Lambert (2017):
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO x based Memristive Devices.
In: Advanced Functional Materials, 27 (32), p. 1700432. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, ISSN 1616301X,
DOI: 10.1002/adfm.201700432,
[Article]

Niu, Gang ; Calka, Pauline ; Auf der Maur, Matthias ; Santoni, Francesco ; Guha, Subhajit ; Fraschke, Mirko ; Hamoumou, Philippe ; Gautier, Brice ; Perez, Eduardo ; Walczyk, Christian ; Wenger, Christian ; Di Carlo, Aldo ; Alff, Lambert ; Schroeder, Thomas (2016):
Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.
In: Scientific Reports, 6, p. 25757. NATURE PUBLISHING GROUP, ENGLAND, ISSN 2045-2322,
[Article]

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