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Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

Niu, Gang and Calka, Pauline and Auf der Maur, Matthias and Santoni, Francesco and Guha, Subhajit and Fraschke, Mirko and Hamoumou, Philippe and Gautier, Brice and Perez, Eduardo and Walczyk, Christian and Wenger, Christian and Di Carlo, Aldo and Alff, Lambert and Schroeder, Thomas (2016):
Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.
In: Scientific Reports, NATURE PUBLISHING GROUP, ENGLAND, p. 25757, 6, ISSN 2045-2322, [Online-Edition: http://dx.doi.org/10.1038/srep25757],
[Article]

Abstract

Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

Item Type: Article
Erschienen: 2016
Creators: Niu, Gang and Calka, Pauline and Auf der Maur, Matthias and Santoni, Francesco and Guha, Subhajit and Fraschke, Mirko and Hamoumou, Philippe and Gautier, Brice and Perez, Eduardo and Walczyk, Christian and Wenger, Christian and Di Carlo, Aldo and Alff, Lambert and Schroeder, Thomas
Title: Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance
Language: English
Abstract:

Filament-type HfO2-based RRAM has been considered as one of the most promising candidates for future non-volatile memories. Further improvement of the stability, particularly at the "OFF" state, of such devices is mainly hindered by resistance variation induced by the uncontrolled oxygen vacancies distribution and filament growth in HfO2 films. We report highly stable endurance of TiN/Ti/HfO2/Si-tip RRAM devices using a CMOS compatible nanotip method. Simulations indicate that the nanotip bottom electrode provides a local confinement for the electrical field and ionic current density; thus a nano-confinement for the oxygen vacancy distribution and nano-filament location is created by this approach. Conductive atomic force microscopy measurements confirm that the filaments form only on the nanotip region. Resistance switching by using pulses shows highly stable endurance for both ON and OFF modes, thanks to the geometric confinement of the conductive path and filament only above the nanotip. This nano-engineering approach opens a new pathway to realize forming-free RRAM devices with improved stability and reliability.

Journal or Publication Title: Scientific Reports
Volume: 6
Publisher: NATURE PUBLISHING GROUP, ENGLAND
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 06 Jun 2016 11:14
Official URL: http://dx.doi.org/10.1038/srep25757
Identification Number: doi:10.1038/srep25757
Funders: P. Calka is grateful to the Alexander von Humboldt foundation for granting her PostDoc fellowship., HP authors gratefully acknowledge the financial support from the Deutsche Forschungsgemeinschaft (DFG) for the RRAM project under contract "SCHR 1123/7-2".
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