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Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Niu, Gang and Calka, Pauline and Huang, Peng and Sharath, Sankaramangalam Ulhas and Petzold, Stefan and Gloskovskii, Andrei and Fröhlich, Karol and Zhao, Yudi and Kang, Jinfeng and Schubert, Markus Andreas and Bärwolf, Florian and Ren, Wei and Ye, Zuo-Guang and Perez, Eduardo and Wenger, Christian and Alff, Lambert and Schroeder, Thomas (2019):
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy.
In: Materials Research Letters, Taylor & Francis Inc., Philadelphia, PA, USA, pp. 117-123, 7, (3), ISSN 2166-3831, DOI: 10.1080/21663831.2018.1561535, [Online-Edition: https://doi.org/10.1080/21663831.2018.1561535],
[Article]

Abstract

The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices.

Item Type: Article
Erschienen: 2019
Creators: Niu, Gang and Calka, Pauline and Huang, Peng and Sharath, Sankaramangalam Ulhas and Petzold, Stefan and Gloskovskii, Andrei and Fröhlich, Karol and Zhao, Yudi and Kang, Jinfeng and Schubert, Markus Andreas and Bärwolf, Florian and Ren, Wei and Ye, Zuo-Guang and Perez, Eduardo and Wenger, Christian and Alff, Lambert and Schroeder, Thomas
Title: Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy
Language: English
Abstract:

The HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices.

Journal or Publication Title: Materials Research Letters
Volume: 7
Number: 3
Publisher: Taylor & Francis Inc., Philadelphia, PA, USA
Uncontrolled Keywords: HAXPES, resistive switching, interface, RRAM, HfO2
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
Date Deposited: 23 Jan 2019 08:22
DOI: 10.1080/21663831.2018.1561535
Official URL: https://doi.org/10.1080/21663831.2018.1561535
Funders: Deutsche Forschungsgemeinschaft (DFG, RRAM project SCHR 1123/7-2 and AL 560/13-2), Natural Science Foundation of China (grant number 51602247), Natural Science Fundamental Research Project of Shaanxi Province of China (No. 2017JQ6003), Fundamental Research Funds for the Central Universities, Natural Sciences and Engineering Research Council of Canada (NSERC DG grant number 203773)
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