Deutsch

Zhao, G. ; Hubbard, S. M. ; Pavlidis, D. (2005)
High quality AlN grown by organometallic vapor phase epitaxy (OMVPE).
Konferenzveröffentlichung, Bibliographie

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2002)
Field emission from quantum size GaN whiskers.
Konferenzveröffentlichung, Bibliographie

Englisch

Hubbard, S. M. ; Zhao, G. ; Pavlidis, D. ; Sutton, W. ; Cho, E. (2005)
High resistivity GaN Buffer templates and their optimization for GaN-Based HFETs.
In: Journal of Crystal Growth, 284
Artikel, Bibliographie

Zhao, G. ; Hubbard, S. M. ; Pavlidis, Dimitris (2004)
Yellow luminescence centers of GaN.
In: Japanese Journal of Applied Physics, 43, Part 1 (5A)
doi: 10.1143/JJAP.43.2471
Artikel, Bibliographie

Hubbard, S. M. ; Zhao, G. ; Pavlidis, Dimitris ; Cho, E. ; Sutton, W. (2004)
Optimization of GaN channel conductivity in AlGaN/GaN HFET structures grown by MOVPE.
Konferenzveröffentlichung, Bibliographie

Yilmazoglu, Oktay ; Pavlidis, Dimitris ; Litvin, Yu. M. ; Hubbard, S. M. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Hartnagel, Hans L. ; Litovchenko, V. G. ; Evtukh, A. A. (2003)
Field emission from quantum size GaN structures.
In: Applied Surface Science, 220 (1-4)
doi: 10.1016/S0169-4332(03)00750-5
Artikel, Bibliographie

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Free excitons in strained MOCVD-grown GaN layers.
In: MRS Internet Journal of Nitride Semiconductor Research, 8 (1)
doi: 10.1557/S1092578300000442
Artikel, Bibliographie

Zhao, G. Y. ; Sutton, W. ; Pavlidis, Dimitris ; Piner, E. ; Schwank, J. W. ; Hubbard, S. M. (2003)
A novel Pt-AlGaN/GaN heterostructure Schottky diode gas sensor on Si.
In: IEICE Transactions C: IEICE Transactions on Electronics, 86 (10)
Artikel, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8)
doi: 10.1063/1.1609048
Artikel, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of Applied Physics, 94 (6)
doi: 10.1063/1.1604950
Artikel, Bibliographie

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. (2003)
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8)
doi: 10.1063/1.1605231
Artikel, Bibliographie

Pavlidis, Dimitris ; Hubbard, S. M. ; Hsu, S. S. H. ; Seo, S. (2003)
AlGaN/GaN and AlN/GaN heterostructure devices : a possible device technology for high RF power wireless transmission.
Konferenzveröffentlichung, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, 18
Artikel, Bibliographie