TU Darmstadt / ULB / TUbiblio

Browse by Person

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: No Grouping | Item Type | Date | Language
Jump to: 2007 | 2004 | 2003 | 1999
Number of items: 10.

2007

Litovchenko, V. and Evtukh, A. and Semenenko, M. and Grigoriev, A. and Yilmazoglu, Oktay and Hartnagel, Hans L. and Sirbu, L. and Tiginyanu, I. M. and Ursaki, V. V. (2007):
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, pp. 1092-1096, 22, [Article]

2004

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Hartnagel, Hans L. and Daumiller, I. (2004):
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, pp. 1273-1279, 19, [Article]

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Mutamba, Kabula and Saglam, Mustafa and Hartnagel, Hans L. (2004):
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
M. Thumm ..., ed.- Piscataway, NJ, IEEE Operations Center, In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b, [Conference or Workshop Item]

2003

Syrbu, N. N. and Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Popa, V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, pp. 1-5, Vol. 8, [Article]

Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Langa, S. and Hubbard, S. M. and Pavlidis, Dimitris and Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied physics letters, pp. 1551-1553, Vol. 8, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of applied physics, pp. 4813-481, Vol. 9, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Ricci, P. C. and Anedda, A. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of applied physics, pp. 3875-388, Vol. 9, [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Syrbu, N. N. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, pp. L9-L11, 18, [Article]

1999

Sarua, A. and Tiginyanu, I. M. and Ursaki, V. V. and Irmer, G. and Monecke, K. and Hartnagel, H. L. (1999):
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
In: Solid state communications, pp. 581-585, 112, [Article]

Tiginyanu, I. and Ursaki, V. V. and Raptis, Y. S. and Stergiou, V. and Anatassakis, E. and Hartnagel, H. L. and Vogt, Alexander and Prevot, B. and Schwab, C. (1999):
Raman modes in porous GaP under hydrostatic pressure.
In: Physica status solidi, pp. 281-286, 211, [Article]

This list was generated on Sat Oct 19 00:48:01 2019 CEST.