TU Darmstadt / ULB / TUbiblio

Browse by Person

Up a level
Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: No Grouping | Item Type | Date | Language
Number of items: 10.

Article

Litovchenko, V. and Evtukh, A. and Semenenko, M. and Grigoriev, A. and Yilmazoglu, Oktay and Hartnagel, Hans L. and Sirbu, L. and Tiginyanu, I. M. and Ursaki, V. V. (2007):
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, 22, pp. 1092-1096. [Article]

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Hartnagel, Hans L. and Daumiller, I. (2004):
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, 19, pp. 1273-1279. [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8), pp. 4813-4818. American Institute of Physics, ISSN 00218979,
DOI: 10.1063/1.1609048,
[Article]

Ursaki, V. V. and Tiginyanu, I. M. and Ricci, P. C. and Anedda, A. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of Applied Physics, 94 (6), pp. 3875-3882. American Institute of Physics, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.1063/1.1604950,
[Article]

Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Langa, S. and Hubbard, S. M. and Pavlidis, Dimitris and Föll, H. (2003):
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8), pp. 1551-1553. AIP Publishing, ISSN 0003-6951,
DOI: 10.1063/1.1605231,
[Article]

Syrbu, N. N. and Tiginyanu, I. M. and Ursaki, V. V. and Zalamai, V. V. and Popa, V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Free excitons in strained MOCVD-grown GaN layers.
In: MRS internet journal of nitride semiconductor research, 8, pp. 1-5. [Article]

Ursaki, V. V. and Tiginyanu, I. M. and Syrbu, N. N. and Zalamai, V. V. and Hubbard, S. M. and Pavlidis, Dimitris (2003):
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
18, In: Semiconductor science and technology, pp. L9-L11. [Article]

Sarua, A. and Tiginyanu, I. M. and Ursaki, V. V. and Irmer, G. and Monecke, K. and Hartnagel, H. L. (1999):
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
112, In: Solid State Communications, (10), pp. 581-585. Elsevier ScienceDirect, ISSN 00381098,
DOI: 10.1016/S0038-1098(99)00385-3,
[Article]

Tiginyanu, I. and Ursaki, V. V. and Raptis, Y. S. and Stergiou, V. and Anatassakis, E. and Hartnagel, H. L. and Vogt, Alexander and Prevot, B. and Schwab, C. (1999):
Raman modes in porous GaP under hydrostatic pressure.
211, In: Physica status solidi, pp. 281-286. Wiley & Sons Ltd., [Article]

Conference or Workshop Item

Cojocari, Oleg and Popa, V. and Ursaki, V. V. and Tiginyanu, I. M. and Mutamba, Kabula and Saglam, Mustafa and Hartnagel, Hans L. (2004):
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
In: Conference digest of the 2004 joint 29th International Conference on Infrared and Millimeter Waves and 12th International Conference on Terahertz Electronics : September 27 - October 1, 2004, University of Karlsruhe (TH), Karlsruhe, Germany / [sponsored b, M. Thumm ..., ed.- Piscataway, NJ, IEEE Operations Center, [Conference or Workshop Item]

This list was generated on Tue Feb 23 01:21:13 2021 CET.