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Number of items: 21.

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, Wolfram (2022)
Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States.
In: Physical Review Letters, 80 (2)
doi: 10.26083/tuprints-00021182
Article, Secondary publication, Publisher's Version

Schlaf, R. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, Wolfram (2022)
Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe₂(0001) interfaces.
In: Physical Review B, 48 (19)
doi: 10.26083/tuprints-00021172
Article, Secondary publication, Publisher's Version

Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1999)
Band line-up of SnS2/SnSe2/SnS2 semiconductor quantum well prepared by an van der Waals epitaxy.
In: Journal of Applied Physics, 85 (9)
doi: 10.1063/1.370160
Article, Bibliographie

Schlaf, R. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1999)
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
In: Journal of Applied Physics, 85 (5)
doi: 10.1063/1.369590
Article, Bibliographie

Klein, Andreas ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. ; Lux-Steiner, M. ; Bucher, E. (1998)
Photovoltaic properties of WSe2 single crystals studied by photoelectron spectroscopy.
In: Solar Energy Materials and Solar Cells, 51 (2)
doi: 10.1016/S0927-0248(97)00234-1
Article, Bibliographie

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1998)
Electronically decoupled InSe films prepared by Van der Waals epitaxy: transition from localized two-dimensional to delocalized states.
In: Physical Review Letters, 80 (2)
doi: 10.1103/PhysRevLett.80.361
Article, Bibliographie

Schlaf, R. ; Löher, T. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. (1997)
Band line-up of van der Waals epitaxy interfaces.
In: MRS Proceedings, 448
doi: 10.1557/PROC-448-469
Article, Bibliographie

Schlaf, R. ; Lang, R. ; Parkinson, C. ; Armstrong, N. R. ; Pettenkofer, C. ; Jaegermann, W. (1997)
Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy.
In: Journal of vacuum science and technology A, 15
doi: 10.1116/1.580543
Article, Bibliographie

Schlaf, R. ; Armstrong, N. R. ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. (1997)
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
In: Surface Science, 385 (1)
doi: 10.1016/S0039-6028(97)00066-6
Article, Bibliographie

Lang, O. ; Klein, Andreas ; Schlaf, R. ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1995)
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4)
doi: 10.1016/0022-0248(94)00504-4
Article, Bibliographie

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. (1995)
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3)
doi: 10.1116/1.579766
Article, Bibliographie

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1994)
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
In: Journal of Applied Physics, 75 (12)
doi: 10.1063/1.356562
Article, Bibliographie

Lang, O. ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1994)
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
In: Journal of Applied Physics, 75 (12)
doi: 10.1063/1.356563
Article, Bibliographie

Jaegermann, W. ; Pettenkofer, C. ; Lang, O. ; Schlaf, R. ; Tiefenbacher, S. ; Tomm, Y. (1994)
Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy.
doi: 10.1109/WCPEC.1994.519975
Conference or Workshop Item, Bibliographie

Schlaf, R. ; Tiefenbacher, S. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1994)
Van der Waals epitaxy of thin InSe films on MoTe2.
In: Surface Science, 303 (1-2)
doi: 10.1016/0039-6028(94)90610-6
Article, Bibliographie

Schlaf, R. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. (1993)
Laterally inhomogeneous surface-potential distribution and photovoltage at clustered In/WSe2(0001) interfaces.
In: Physical Review B, 48 (19)
doi: 10.1103/PhysRevB.48.14242
Article, Bibliographie

Schellenberger, A. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1993)
XPS and SXPS studies on in-situ prepared Na/InSe insertion compounds.
In: Solid State Ionics, 66 (3-4)
doi: 10.1016/0167-2738(93)90420-8
Article, Bibliographie

Schellenberger, A. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1992)
Synchrotron induced surface photovoltage saturation at intercalated Na/WSe2 interfaces.
In: Physical Review B, 45 (7)
doi: 10.1103/PhysRevB.45.3538
Article, Bibliographie

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1992)
Van Der Waals Epitaxy of GaSe on WSe2.
In: MRS Proceedings, 263
doi: 10.1557/PROC-263-291
Article, Bibliographie

Schlaf, R. ; Sehnert, H. ; Pettenkofer, C. ; Jaegermann, W. (1991)
Inhomogeneous Electric Potential Distributions Induced by in-Clusters Grown on p-WSe2(0001) Surfaces.
In: MRS Proceedings, 221
doi: 10.1557/PROC-221-137
Article, Bibliographie

Schellenberger, A. ; Schlaf, R. ; Mayer, T. ; Holub-Krappe, E. ; Pettenkofer, C. ; Jaegermann, W. ; Ditzinger, U. A. ; Neddermeyer, H. (1991)
Na adsorption on the layered semiconductors SnS2 and WSe2.
In: Surface Science Letters, 241 (3)
doi: 10.1016/0167-2584(91)91124-F
Article, Bibliographie

This list was generated on Tue Feb 27 00:45:50 2024 CET.