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Number of items: 18.

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, Wolfram (2022)
Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States.
In: Physical Review Letters, 80 (2)
doi: 10.26083/tuprints-00021182
Article, Secondary publication, Publisher's Version

Lang, O. ; Klein, Andreas ; Pettenkofer, Christian ; Jaegermann, Wolfram ; Chevy, Alain (2021)
Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles.
In: Journal of Applied Physics, 80 (7)
doi: 10.26083/tuprints-00019891
Article, Secondary publication, Publisher's Version

Lang, O. ; Pettenkofer, C. ; Sánchez-Royo, Juan Francisco ; Segura, Alfredo ; Klein, Andreas ; Jaegermann, Wolfram (2021)
Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe.
In: Journal of Applied Physics, 86 (10)
doi: 10.26083/tuprints-00019939
Article, Secondary publication, Publisher's Version

Schirski, Marc ; Gerndt, Andreas ; Reimersdahl, Thomas van ; Kuhlen, Torsten ; Adomeit, Philipp ; Lang, O. ; Pischinger, Stefan ; Bischof, Christian (2003)
Vista FlowLib : a framework for interactive visualization and exploration of unsteady flows in virtual environments.
IPT/EGVE 2003 : Seventh Immersive Projection Technology Workshop, Ninth Eurographics Workshop on Virtual Environments ; Zurich, Switzerland, May 22 - 23, 2003 ; Eurographics/Fraunhofer IAO workshop proceedings / sponsored by the Eurographics Organization.
Conference or Workshop Item, Bibliographie

Sánchez-Royo, J. F. ; Segura, A. ; Lang, O. ; Schaar, E. ; Pettenkofer, C. ; Jaegermann, W. ; Roa, L. ; Chevy, A. (2001)
Optical and Photovoltaic Properties of InSe Thin Films Prepared by van der Waals Epitaxy.
In: Journal of Applied Physics, 90 (6)
doi: 10.1063/1.1389479
Article, Bibliographie

Schlaf, R. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1999)
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
In: Journal of Applied Physics, 85 (5)
doi: 10.1063/1.369590
Article, Bibliographie

Lang, O. ; Pettenkofer, C. ; Sanchez-Royo, J. F. ; Segura, A. ; Klein, Andreas ; Jaegermann, W. (1999)
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe.
In: Journal of applied physics, 86
doi: 10.1063/1.371579
Article, Bibliographie

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1998)
Electronically decoupled InSe films prepared by Van der Waals epitaxy: transition from localized two-dimensional to delocalized states.
In: Physical Review Letters, 80 (2)
doi: 10.1103/PhysRevLett.80.361
Article, Bibliographie

Sánchez-Royo, J. F. ; Segura, A. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. ; Roa, L. (1997)
Photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy.
In: Thin Solid Films, 307 (1-2)
doi: 10.1016/S0040-6090(97)00265-4
Article, Bibliographie

Lang, O. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1996)
Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles.
In: Journal of Applied Physics, 80 (7)
doi: 10.1063/1.363335
Article, Bibliographie

Lang, O. ; Klein, Andreas ; Schlaf, R. ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1995)
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4)
doi: 10.1016/0022-0248(94)00504-4
Article, Bibliographie

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. (1995)
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3)
doi: 10.1116/1.579766
Article, Bibliographie

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1994)
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
In: Journal of Applied Physics, 75 (12)
doi: 10.1063/1.356562
Article, Bibliographie

Lang, O. ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1994)
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
In: Journal of Applied Physics, 75 (12)
doi: 10.1063/1.356563
Article, Bibliographie

Jaegermann, W. ; Pettenkofer, C. ; Lang, O. ; Schlaf, R. ; Tiefenbacher, S. ; Tomm, Y. (1994)
Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy.
doi: 10.1109/WCPEC.1994.519975
Conference or Workshop Item, Bibliographie

Schlaf, R. ; Tiefenbacher, S. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1994)
Van der Waals epitaxy of thin InSe films on MoTe2.
In: Surface Science, 303 (1-2)
doi: 10.1016/0039-6028(94)90610-6
Article, Bibliographie

Mayer, T. ; Klein, Andreas ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1992)
H2O adsorption on the layered chalcogenide semiconductors WSe2, InSe and GaSe.
In: Surface Science, 269-270
doi: 10.1016/0039-6028(92)91368-L
Article, Bibliographie

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1992)
Van Der Waals Epitaxy of GaSe on WSe2.
In: MRS Proceedings, 263
doi: 10.1557/PROC-263-291
Article, Bibliographie

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