Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, Wolfram (2022):
Electronically Decoupled Films of InSe Prepared by van der Waals Epitaxy: Localized and Delocalized Valence States. (Publisher's Version)
In: Physical Review Letters, 80 (2), pp. 361-364. American Physical Society, ISSN 0031-9007, e-ISSN 1079-7114,
DOI: 10.26083/tuprints-00021182,
[Article]

Lang, O. ; Klein, Andreas ; Pettenkofer, Christian ; Jaegermann, Wolfram ; Chevy, Alain (2021):
Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles. (Publisher's Version)
In: Journal of Applied Physics, 80 (7), pp. 3817-3821. AIP Publishing, ISSN 0021-8979, e-ISSN 1077-3118,
DOI: 10.26083/tuprints-00019891,
[Article]

Lang, O. ; Pettenkofer, C. ; Sánchez-Royo, Juan Francisco ; Segura, Alfredo ; Klein, Andreas ; Jaegermann, Wolfram (2021):
Thin film growth and band lineup of In₂O₃ on the layered semiconductor InSe. (Publisher's Version)
In: Journal of Applied Physics, 86 (10), pp. 5687-5691. AIP Publishing, ISSN 0021-8979, e-ISSN 1089-7550,
DOI: 10.26083/tuprints-00019939,
[Article]

Schirski, Marc ; Gerndt, Andreas ; Reimersdahl, Thomas van ; Kuhlen, Torsten ; Adomeit, Philipp ; Lang, O. ; Pischinger, Stefan ; Bischof, Christian (2003):
Vista FlowLib : a framework for interactive visualization and exploration of unsteady flows in virtual environments.
In: ACM International Conference Proceeding Series ; Vol. 39, pp. 77-85, Aire-la-Ville, Switzerland, Eurographics Association, IPT/EGVE 2003 : Seventh Immersive Projection Technology Workshop, Ninth Eurographics Workshop on Virtual Environments ; Zurich, Switzerland, May 22 - 23, 2003 ; Eurographics/Fraunhofer IAO workshop proceedings / sponsored by the Eurographics Organization, [Conference or Workshop Item]

Sánchez-Royo, J. F. ; Segura, A. ; Lang, O. ; Schaar, E. ; Pettenkofer, C. ; Jaegermann, W. ; Roa, L. ; Chevy, A. (2001):
Optical and Photovoltaic Properties of InSe Thin Films Prepared by van der Waals Epitaxy.
In: Journal of Applied Physics, 90 (6), pp. 2818-2823. ISSN 00218979,
[Article]

Schlaf, R. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1999):
Band line-up of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Quantum dipole correction term of the electron affinity rule.
In: Journal of Applied Physics, 85 (5), pp. 2732-2753. ISSN 00218979,
[Article]

Lang, O. ; Pettenkofer, C. ; Sanchez-Royo, J. F. ; Segura, A. ; Klein, Andreas ; Jaegermann, W. (1999):
Thin film growth and band lineup of In2O3 on the layered semiconductor InSe.
In: Journal of applied physics, 86, pp. 5687-5691. [Article]

Klein, Andreas ; Lang, O. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1998):
Electronically decoupled InSe films prepared by Van der Waals epitaxy: transition from localized two-dimensional to delocalized states.
In: Physical Review Letters, 80 (2), pp. 361-364. American Physical Society (APS), ISSN 0031-9007, e-ISSN 1079-7114,
DOI: 10.1103/PhysRevLett.80.361,
[Article]

Sánchez-Royo, J. F. ; Segura, A. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. ; Roa, L. (1997):
Photovoltaic properties of indium selenide thin films prepared by van der Waals epitaxy.
In: Thin Solid Films, 307 (1-2), pp. 283-287. ISSN 00406090,
[Article]

Lang, O. ; Klein, Andreas ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1996):
Band lineup of lattice mismatched InSe/GaSe quantum well structures prepared by van der Waals epitaxy: Absence of interfacial dipoles.
In: Journal of Applied Physics, 80 (7), p. 3817. ISSN 00218979,
[Article]

Lang, O. ; Klein, Andreas ; Schlaf, R. ; Löher, T. ; Pettenkofer, C. ; Jaegermann, W. ; Chevy, A. (1995):
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4), pp. 439-443. ISSN 00220248,
[Article]

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. (1995):
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3), p. 1761. ISSN 07342101,
[Article]

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: I. Growth conditions.
In: Journal of Applied Physics, 75 (12), p. 7805. ISSN 00218979,
[Article]

Lang, O. ; Tomm, Y. ; Schlaf, R. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Single crystalline GaSe/WSe2 heterointerfaces grown by van der Waals epitaxy: II. Junction characterization.
In: Journal of Applied Physics, 75 (12), p. 7814. ISSN 00218979,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Lang, O. ; Schlaf, R. ; Tiefenbacher, S. ; Tomm, Y. (1994):
Thin film solar cells based on layered chalcogenides: Fundamentals and perspectives of van der Waals epitaxy.
1, In: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), pp. 357-360,
[Conference or Workshop Item]

Schlaf, R. ; Tiefenbacher, S. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1994):
Van der Waals epitaxy of thin InSe films on MoTe2.
In: Surface Science, 303 (1-2), pp. L343-L347. ISSN 00396028,
[Article]

Mayer, T. ; Klein, Andreas ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. (1992):
H2O adsorption on the layered chalcogenide semiconductors WSe2, InSe and GaSe.
In: Surface Science, 269-270, pp. 909-914. ISSN 00396028,
[Article]

Lang, O. ; Schlaf, R. ; Tomm, Y. ; Pettenkofer, C. ; Jaegermann, W. (1992):
Van Der Waals Epitaxy of GaSe on WSe2.
In: MRS Proceedings, 263, p. 291. ISSN 1946-4274,
[Article]