Balitskii, O. A. ; Jaeckel, B. ; Jaegermann, W. (2008)
Surface properties of GaTe single crystals.
In: Physics Letters A, 372 (18)
doi: 10.1016/j.physleta.2008.01.051
Artikel, Bibliographie

Jaeckel, B. ; Lim, T. ; Klein, Andreas ; Jaegermann, W. ; Parkinson, B. A. (2007)
Deposition of Tetracene on GaSe Passivated Si(111).
In: Langmuir, 23 (9)
doi: 10.1021/la061361g
Artikel, Bibliographie

Jaeckel, B. ; Hunger, R. ; Webb, L. J. ; Jaegermann, W. ; Lewis, N. S. (2007)
High-Resolution Synchrotron Photoemission Studies of the Electronic Structure and Thermal Stability of CH3- and C2H5-Functionalized Si(111) Surfaces.
In: Journal of Physical Chemistry C, 111 (49)
doi: 10.1021/jp0751413
Artikel, Bibliographie

Jaeckel, B. ; Gassenbauer, Y. ; Jaegermann, W. ; Tomm, Y. (2005)
AFM tip induced formation of nanometer scale structures on WSe2 under defined conditions.
Proceedings of the final Workshop of the Priority Program Fundamentals of Electrochemical Nanotechnology of the DFG.
doi: 10.1016/j.susc.2004.05.147
Konferenzveröffentlichung, Bibliographie

Jaeckel, B. ; Fritsche, R. ; Klein, Andreas ; Jaegermann, W. (2005)
ZnS deposition onto bare and GaSe terminated Silicon-(111)-surfaces.
In: AIP conference proceedings, 772 (1)
doi: 10.1063/1.1994039
Artikel, Bibliographie

Fritsche, R. ; Jaeckel, B. ; Klein, Andreas ; Jaegermann, W. (2004)
High-resolution photoemission study of the Si(111)/Au interface and its modification by GaSe van der Waals termination layer.
In: Applied Surface Science, 234 (1-4)
doi: 10.1016/j.apsusc.2004.05.038
Artikel, Bibliographie

Balitskii, O. A. ; Savchyn, V. P. ; Jaeckel, B. ; Jaegermann, W. (2004)
Surface characterization of In4Se3 single crystals.
In: Physica E: Low-dimensional Systems and Nanostructures, 22 (4)
doi: 10.1016/j.physe.2003.11.198
Artikel, Bibliographie