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Number of items: 10.

Litovchenko, V. ; Evtukh, A. ; Semenenko, M. ; Grigoriev, A. ; Yilmazoglu, Oktay ; Hartnagel, Hans L. ; Sirbu, L. ; Tiginyanu, I. M. ; Ursaki, V. V. (2007)
Electron field emission from narrow band gap semiconductors (InAs).
In: Semiconductor science and technology, 22
Article, Bibliographie

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Hartnagel, Hans L. ; Daumiller, I. (2004)
GaN Schottky multiplier diodes prepared by electroplating : a study of passivation technology.
In: Semiconductor science and technology, 19
Article, Bibliographie

Cojocari, Oleg ; Popa, V. ; Ursaki, V. V. ; Tiginyanu, I. M. ; Mutamba, Kabula ; Saglam, Mustafa ; Hartnagel, Hans L. (2004)
Micrometer-size GaN Schottky-diodes for MM-wave frequency multipliers.
Conference or Workshop Item, Bibliographie

Syrbu, N. N. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Popa, V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Free excitons in strained MOCVD-grown GaN layers.
In: MRS Internet Journal of Nitride Semiconductor Research, 8 (1)
doi: 10.1557/S1092578300000442
Article, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Optical characterization of AlN/GaN heterostructure.
In: Journal of Applied Physics, 94 (8)
doi: 10.1063/1.1609048
Article, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Ricci, P. C. ; Anedda, A. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation.
In: Journal of Applied Physics, 94 (6)
doi: 10.1063/1.1604950
Article, Bibliographie

Tiginyanu, I. M. ; Ursaki, V. V. ; Zalamai, V. V. ; Langa, S. ; Hubbard, S. M. ; Pavlidis, Dimitris ; Föll, H. (2003)
Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching.
In: Applied Physics Letters, 83 (8)
doi: 10.1063/1.1605231
Article, Bibliographie

Ursaki, V. V. ; Tiginyanu, I. M. ; Syrbu, N. N. ; Zalamai, V. V. ; Hubbard, S. M. ; Pavlidis, Dimitris (2003)
Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures.
In: Semiconductor science and technology, 18
Article, Bibliographie

Sarua, A. ; Tiginyanu, I. M. ; Ursaki, V. V. ; Irmer, G. ; Monecke, K. ; Hartnagel, H. L. (1999)
Charge carrier distribution in free-standing porous GaP membranes studied by Raman spectroscopy.
In: Solid State Communications, 112 (10)
doi: 10.1016/S0038-1098(99)00385-3
Article, Bibliographie

Tiginyanu, I. ; Ursaki, V. V. ; Raptis, Y. S. ; Stergiou, V. ; Anatassakis, E. ; Hartnagel, H. L. ; Vogt, Alexander ; Prevot, B. ; Schwab, C. (1999)
Raman modes in porous GaP under hydrostatic pressure.
In: Physica status solidi, 211
Article, Bibliographie

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