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Number of items: 3.

Petzold, S. and Zintler, Alexander and Eilhardt, Robert and Piros, E. and Kaiser, N. and Sharath, S. U. and Vogel, T. and Major, M. and McKenna, K. P. and Molina-Luna, Leopoldo and Alff, Lambert (2019):
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices.
In: Advanced Electronic Materials, 25 (S2), pp. 1842-1843. WILEY, ISSN 2199160X,
DOI: 0.1017/S1431927619009942,
[Article]

Petzold, S. and Piros, E. and Sharath, S. U. and Zintler, Alexander and Hildebrandt, Erwin and Molina-Luna, Leopoldo and Wenger, C. and Alff, Lambert (2019):
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology, ISSN 0268-1242,
DOI: 10.1088/1361-6641/ab220f,
[Article]

Petzold, S. and Miranda, E. and Sharath, S.U. and Munos-Gorriz, J. and Vogel, T. and Piros, E. and Kaiser, N. and Eilhardt, Robert and Zintler, Alexander and Molina-Luna, Leopoldo and Sune, J. and Alff, Lambert (2019):
Analysis and simulation of the multiple resistive switching modes occurring in HfOx-based resistive random access memories using memdiodes.
In: Journal of Applied Physics, (125), p. 234503. ISSN 00218979,
DOI: 10.1063/1.5094864,
[Article]

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