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Number of items: 13.

Jaeckel, B. ; Lim, T. ; Klein, Andreas ; Jaegermann, W. ; Parkinson, B. A. (2007):
Deposition of Tetracene on GaSe Passivated Si(111).
In: Langmuir, 23 (9), pp. 4856-4861. ISSN 0743-7463,
[Article]

Schlaf, R. ; Armstrong, N. R. ; Parkinson, B. A. ; Pettenkofer, C. ; Jaegermann, W. (1997):
Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes.
In: Surface Science, 385 (1), pp. 1-14. ISSN 00396028,
[Article]

Schlaf, R. ; Louder, D. ; Lang, O. ; Pettenkofer, C. ; Jaegermann, W. ; Nebesny, K. ; Lee, P. ; Parkinson, B. A. ; Armstrong, N. R. (1995):
Molecular beam epitaxy growth of thin films of SnS2 and SnSe2 on cleaved mica and the basal planes of single-crystal layered semiconductors: Reflection high-energy electron diffraction, low-energy electron diffraction, photoemission, and scanning tunneling microscopy/atomic force microscopy characterization.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 13 (3), p. 1761. ISSN 07342101,
[Article]

Pettenkofer, C. ; Jaegermann, W. ; Parkinson, B. A. (1991):
Copper intercalation in 1T-TaS2.
In: Surface Science, 251-252, pp. 583-586. ISSN 00396028,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1990):
Ag on p-WSe2(0001) surfaces: Approaching the Schottky limit?
In: Vacuum, 41 (4-6), pp. 800-803. ISSN 0042207X,
[Article]

Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1990):
Cu and Ag deposition on layered p-type WSe2: Approaching the Schottky limit.
In: Physical Review B, 42 (12), pp. 7487-7496. ISSN 0163-1829,
[Article]

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. (1989):
Electrochemical and solid state reactions of copper with n-SnS2.
In: Berichte der Bunsengesellschaft fŁr physikalische Chemie, 93 (1), pp. 29-37. ISSN 00059021,
[Article]

Ohuchi, F. S. ; Jaegermann, W. ; Pettenkofer, C. ; Parkinson, B. A. (1989):
Semiconductor to metal transition of WS2 induced by K intercalation in ultrahigh vacuum.
In: Langmuir, 5 (2), pp. 439-442. ISSN 0743-7463,
[Article]

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. (1988):
Interaction of Cu, Ag and Au with van der Waals faces of WS and SnS2.
In: Surface Science, 201 (1-2), pp. 211-227. ISSN 00396028,
[Article]

O'Hare, D. ; Jaegermann, W. ; Williamson, D. L. ; Ohuchi, F. S. ; Parkinson, B. A. (1988):
X-ray photoelectron, Moessbauer, magnetic and electrical conductivity study of SnS2{CoCp2}0.31.
In: Inorganic Chemistry, 27 (9), pp. 1537-1542. ISSN 0020-1669,
[Article]

Ohuchi, F. S. ; Jaegermann, W. ; Parkinson, B. A. (1988):
XPS investigation of the reaction of SnS2(0001) with Cu.
In: Surface Science, 194 (1-2), pp. L69-L76. ISSN 00396028,
[Article]

Jaegermann, W. ; Ohuchi, F. S. ; Parkinson, B. A. (1988):
The interaction of group IB metals with van der waals faces of semiconducting metal dichalcogenides.
In: Surface and Interface Analysis, 12 (5), pp. 293-296. ISSN 0142-2421,
[Article]

Doering, D. L. ; Ohuchi, F. S. ; Jaegermann, W. ; Parkinson, B. A. (1987):
Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide.
In: MRS Proceedings, 102, pp. 41-43. Springer, ISSN 1946-4274,
[Article]

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