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Number of items: 5.

Lal, K. ; Hartnagel, H. L. ; Goswami, N. ; Thoma, P. (2000)
Experimental evaluation of on-chip measurement of charge transfer by X-rays.
In: Electronics letters, 36
Article, Bibliographie

Lal, K. ; Goswami, N. ; Miao, J. ; Hartnagel, H. L. (1999)
High-resolution X-ray diffraction study of free-standing gallium arsenide coiled membrane force sensors produced by micromachining.
Conference or Workshop Item, Bibliographie

Lal, K. ; Goswami, N. ; Miao, J. ; Hartnagel, H. L. (1999)
Structural characterization of free-standing gallium arsenide coiled membranes produced by micromachining.
In: Journal of applied crystallography, 32
Article, Bibliographie

Vogt, A. ; Brandt, M. ; Sigurdardottir, A. ; Schüssler, M. ; Pena, D. ; Simon, A. ; Hartnagel, H. L. ; Rodewald, M. ; Roesner, M. ; Fuess, H. ; Goswami, S. N. N. ; Lal, K. (1997)
Characterisation of degradation mechanisms in resonant tunnelling diodes.
In: Microelectronics Reliability, 37 (10-11)
doi: 10.1016/S0026-2714(97)00141-8
Article, Bibliographie

Niranjana, S. ; Goswami, S. N. N. ; Lal, K. ; Vogt, Alexander ; Hartnagel, Hans L.
ed.: Kumar, Vikram (1997)
Determination of crystalline perfection and lattice-mismatch between gallium antimonide epitaxial films and gallium arsenide substrates.
9. International Workshop on Physics of Semiconductor Devices. New Delhi, India (December 16-20, 1997)
Conference or Workshop Item, Bibliographie

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