2000

Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L. (2000)
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000)
Artikel, Bibliographie

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. (2000)
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
In: Applied physics letters, 76
Artikel, Bibliographie

1997

Tiginyanu, I. ; Pavlidis, D. ; Cao, J. ; Eisenbach, A. ; Ichizli, Victoria M. ; Hartnagel, Hans L. ; Anedda, A. ; Corpino, R. (1997)
Time-resolved photoluminescence characterisation of GaN layers grown by metalorganic chemical vapor deposition.
Konferenzveröffentlichung, Bibliographie

1995

Kuphal, E. ; Mause, K. ; Miethe, K. ; Eisenbach, A. ; Fiedler, F. ; Corbet, A. (1995)
Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors.
In: Solid state electronics, 38 (4)
doi: 10.1016/0038-1101(94)00182-F
Artikel, Bibliographie