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Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors

Kuphal, E. and Mause, and Miethe, and Eisenbach, and Fiedler, and Corbet, (1995):
Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors.
In: Solid state electronics. 38 (1995), Nr. 4, S. 795-799, [Article]

Item Type: Article
Erschienen: 1995
Creators: Kuphal, E. and Mause, and Miethe, and Eisenbach, and Fiedler, and Corbet,
Title: Electron diffusion length in InGaAs:Zn derived from heterostructure bipolar transistors
Language: German
Journal or Publication Title: Solid state electronics. 38 (1995), Nr. 4, S. 795-799
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 15:58
License: [undefiniert]
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