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Number of items: 12.

English

Löher, T. and Tomm, Y. and Pettenkofer, C. and Klein, Andreas and Jaegermann, W. (2000):
Structural dipoles at interfaces between polar II-VI semiconductors CdS and CdTe and non-polar layered transition metal dichalcogenide semiconductors MoTe2and WSe2.
In: Semiconductor Science and Technology, 15 (6), pp. 514-522, ISSN 0268-1242,
[Online-Edition: http://dx.doi.org/10.1088/0268-1242/15/6/305],
[Article]

Klein, Andreas and Löher, T. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1997):
Band line-up between CdS and UHV-cleaved CuInS2 single crystals.
In: Applied Physics Letters, 70pp. 1299-1301, ISSN 00036951,
[Online-Edition: http://dx.doi.org/10.1063/1.118517],
[Article]

Schlaf, R. and Löher, T. and Klein, Andreas and Pettenkofer, C. and Jaegermann, W. (1997):
Band line-up of van der Waals epitaxy interfaces.
In: MRS Proceedings, 448p. 469, ISSN 1946-4274,
[Article]

Löher, T. and Klein, Andreas and Schaar-Gabriel, E. and Rudolph, R. and Tomm, Y. and Giersig, M. and Pettenkofer, C. and Jaegermann, W. (1997):
Van der Waals epitaxy of II-VI semiconductors on layered chalcogenide (0001) substrates: Towards buffer layers for lattice mismatched systems?
In: MRS Proceedings, 441p. 597, ISSN 1946-4274,
[Article]

Löher, T. and Klein, Andreas and Pettenkofer, C. and Jaegermann, W. (1997):
Partial density of states in the CuInSe2 valence bands.
In: Journal of Applied Physics, 81 (12), pp. 7806-7809, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.365390],
[Article]

Klein, Andreas and Löher, T. and Pettenkofer, C. and Jaegermann, W. (1996):
Chemical interaction of Na with cleaved (011) surfaces of CuInSe2.
In: Journal of Applied Physics, 80 (9), pp. 5039-5043, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.363549],
[Article]

Löher, T. and Tomm, Y. and Klein, Andreas and Su, D. and Pettenkofer, C. and Jaegermann, W. (1996):
Highly oriented layers of the three-dimensional semiconductor CdTe on the two-dimensional layered semiconductors MoTe2 and WSe2.
In: Journal of Applied Physics, 80 (10), p. 5718, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.363624],
[Article]

Henrion, O. and Löher, T. and Klein, Andreas and Pettenkofer, C. and Jaegermann, W. (1996):
Low temperature adsorption of water on cleaved GaAs(110) surfaces.
In: Surface Science, 366 (1), pp. L685-L688, ISSN 00396028,
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(96)00886-2],
[Article]

Löher, T. and Tomm, Y. and Pettenkofer, C. and Giersig, M. and Jaegermann, W. (1995):
Epitaxial films of the 3D semiconductor CdS on the 2D layered substrate MX2 prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4), pp. 408-413, ISSN 00220248,
[Online-Edition: http://dx.doi.org/10.1016/0022-0248(94)00505-2],
[Article]

Löher, T. and Jaegermann, W. and Pettenkofer, C. (1995):
Formation and electronic properties of the CdS/CuInSe2(011) heterointerface studied by synchrotron-induced photoemission.
In: Journal of Applied Physics, 77 (2), p. 731, ISSN 00218979,
[Online-Edition: http://dx.doi.org/10.1063/1.359583],
[Article]

Lang, O. and Klein, Andreas and Schlaf, R. and Löher, T. and Pettenkofer, C. and Jaegermann, W. and Chevy, A. (1995):
InSe/GaSe heterointerfaces prepared by Van der Waals epitaxy.
In: Journal of Crystal Growth, 146 (1-4), pp. 439-443, ISSN 00220248,
[Online-Edition: http://dx.doi.org/10.1016/0022-0248(94)00504-4],
[Article]

Löher, T. and Tomm, Y. and Pettenkofer, C. and Jaegermann, W. (1994):
Van der Waals epitaxy of three-dimensional CdS on the two-dimensional layered substrate MoTe2(0001).
In: Applied Physics Letters, 65 (5), p. 555, ISSN 00036951,
[Online-Edition: http://dx.doi.org/10.1063/1.112294],
[Article]

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