Löher, T. ; Tomm, Y. ; Klein, Andreas ; Su, D. ; Pettenkofer, C. ; Jaegermann, Wolfram (2021)
Highly oriented layers of the three‐dimensional semiconductor CdTe on the two‐dimensional layered semiconductors MoTe₂and WSe₂.
In: Journal of Applied Physics, 80 (10)
doi: 10.26083/tuprints-00019923
Artikel, Zweitveröffentlichung, Verlagsversion
Kurzbeschreibung (Abstract)
The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe₂ and WSe₂ by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer of CdTe at room temperature. After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170–370 °C) in order to increase the crystalline quality of the films. The deposited films were investigated after each growth step by low energy electron diffraction and photoelectron spectroscopy. The diffraction pattern indicates a facetting of the (111) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV experiments. The mean diameter of the film crystallites is 200–400 Å.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2021 |
| Autor(en): | Löher, T. ; Tomm, Y. ; Klein, Andreas ; Su, D. ; Pettenkofer, C. ; Jaegermann, Wolfram |
| Art des Eintrags: | Zweitveröffentlichung |
| Titel: | Highly oriented layers of the three‐dimensional semiconductor CdTe on the two‐dimensional layered semiconductors MoTe₂and WSe₂ |
| Sprache: | Englisch |
| Publikationsjahr: | 2021 |
| Verlag: | AIP Publishing |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Journal of Applied Physics |
| Jahrgang/Volume einer Zeitschrift: | 80 |
| (Heft-)Nummer: | 10 |
| DOI: | 10.26083/tuprints-00019923 |
| URL / URN: | https://tuprints.ulb.tu-darmstadt.de/19923 |
| Zugehörige Links: | |
| Herkunft: | Zweitveröffentlichungsservice |
| Kurzbeschreibung (Abstract): | The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe₂ and WSe₂ by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer of CdTe at room temperature. After nucleation subsequent deposition steps followed at increased substrate temperatures (T=170–370 °C) in order to increase the crystalline quality of the films. The deposited films were investigated after each growth step by low energy electron diffraction and photoelectron spectroscopy. The diffraction pattern indicates a facetting of the (111) oriented film surfaces. From photoemission data we exclude interface reactions between substrate and film material. Transmission electron microscopy was used to examine the film morphology after the UHV experiments. The mean diameter of the film crystallites is 200–400 Å. |
| Status: | Verlagsversion |
| URN: | urn:nbn:de:tuda-tuprints-199234 |
| Sachgruppe der Dewey Dezimalklassifikatin (DDC): | 500 Naturwissenschaften und Mathematik > 530 Physik |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Oberflächenforschung |
| Hinterlegungsdatum: | 17 Nov 2021 13:13 |
| Letzte Änderung: | 18 Nov 2021 07:00 |
| PPN: | |
| Zugehörige Links: | |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum