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Jump to: 1998
Number of items: 3.

1998

Vogt, Alexander ; Simon, A. ; Weber, ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Fuess, H. (1998):
Non-annealed Ohmic contacts to p-GaSb grown by molecular beam epitaxy.
In: EXMATEC´98: International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies <1998, Cardiff>: Proceedings, [Conference or Workshop Item]

Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Koerdt, C. ; Kurz, H. (1998):
Ohmic contact formation mechanics of the PdGeAu system on n-type GaSb grown by molecular beam epitaxy.
83, In: Journal of Applied Physics, (12), pp. 7715-7719. American Institute of Physics, ISSN 0021-8979,
[Article]

Vogt, Alexander ; Simon, A. ; Hartnagel, H. L. ; Schikora, J. ; Buschmann, V. ; Rodewald, M. ; Fuess, H. ; Fascko, S. ; Kurz, H. (1998):
Ohmsche Kontakte des Systems Pd/Ge/Au auf n-GaSb.
In: Jahrestagung Deutsche Gesellschaft für Kristallographie <6, 1998, Karlsruhe>: Tagungsbd., [Conference or Workshop Item]

This list was generated on Sat Jul 24 02:37:50 2021 CEST.