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Number of items: 5.

German

Tiginyanu, I. ; Kravetsky, I. V. ; Monecke, J. ; Cordts, W. ; Marowsky, G. ; Hartnagel, H. L. (2000):
Semiconductor sieves as nonlinear optical materials.
77, In: Applied physics letters, pp. S. 2415-2417. [Article]

English

Tiginyanu, I. M. ; Kravetsky, I. V. ; Marowsky, G. ; Monecke, J. ; Hartnagel, H. L. (2000):
Design of new nonlinear optical materials based on porous III-V compounds.
221, In: physica status solidi (b), (1), pp. 557-560. WILEY-VCH, ISSN 0370-1972, e-ISSN 1521-3951,
DOI: 10.1002/1521-3951(200009)221:1<557::AID-PSSB557>3.0.CO;2-6,
[Article]

Tiginyanu, I. ; Kravetsky, I. ; Pavlidis, D. ; Eisenbach, A. ; Hildebrandt, R. ; Marowsky, G. ; Hartnagel, H. L. (2000):
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire.
In: MRS Internet journal nitride semiconductor research. 5S1, W11.52 (2000), [Article]

Kravetsky, V. ; Tiginyanu, I. M. ; Hildebrandt, R. ; Marowsky, G. ; Pavlidis, D. ; Eisenbach, A. ; Hartnagel, H. L. (2000):
Nonlinear optical response of GaN layers on sapphire: the impact of fundamental beam interference.
76, In: Applied physics letters, pp. S. 810-812. [Article]

Tiginyanu, I. ; Kravetsky, I. V. ; Marowsky, G. ; Monecke, J. ; Cordts, W. ; Hartnagel, H. L. (2000):
Semiconductor sieves as novel materials for nonlinear optical applications.
In: Materials Research Society: Fall Meeting <2000, Boston, Mass.>. Abstract Booklet; Report ES.13, [Conference or Workshop Item]

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