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Charge-state related effects in sputtering of LiF by swift heavy ions

Assmann, W. and Ban-d'Etat, B. and Bender, M. and Boduch, P. and Grande, P. L. and Lebius, H. and Lelièvre, D. and Marmitt, G. G. and Rothard, H. and Seidl, T. and Severin, D. and Voss, K.-O. and Toulemonde, M. and Trautmann, C. (2017):
Charge-state related effects in sputtering of LiF by swift heavy ions.
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier Science Publishing, pp. 94-101, 392, ISSN 0168583X,
DOI: 10.1016/j.nimb.2016.12.013,
[Online-Edition: https://doi.org/10.1016/j.nimb.2016.12.013],
[Article]

Abstract

Sputtering experiments with swift heavy ions in the electronic energy loss regime were performed by using the catcher technique in combination with elastic recoil detection analysis. The angular distribution of particles sputtered from the surface of LiF single crystals is composed of a jet-like peak superimposed on a broad isotropic distribution. By using incident ions of fixed energy but different charges states, the influence of the electronic energy loss on both components is probed. We find indications that isotropic sputtering originates from near-surface layers, whereas the jet component may be affected by contributions from depth up to about 150 nm.

Item Type: Article
Erschienen: 2017
Creators: Assmann, W. and Ban-d'Etat, B. and Bender, M. and Boduch, P. and Grande, P. L. and Lebius, H. and Lelièvre, D. and Marmitt, G. G. and Rothard, H. and Seidl, T. and Severin, D. and Voss, K.-O. and Toulemonde, M. and Trautmann, C.
Title: Charge-state related effects in sputtering of LiF by swift heavy ions
Language: English
Abstract:

Sputtering experiments with swift heavy ions in the electronic energy loss regime were performed by using the catcher technique in combination with elastic recoil detection analysis. The angular distribution of particles sputtered from the surface of LiF single crystals is composed of a jet-like peak superimposed on a broad isotropic distribution. By using incident ions of fixed energy but different charges states, the influence of the electronic energy loss on both components is probed. We find indications that isotropic sputtering originates from near-surface layers, whereas the jet component may be affected by contributions from depth up to about 150 nm.

Journal or Publication Title: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Volume: 392
Publisher: Elsevier Science Publishing
Uncontrolled Keywords: Electronic energy loss, Sputtering, LiF, Jet component
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Ion-Beam-Modified Materials
Date Deposited: 29 Dec 2017 12:21
DOI: 10.1016/j.nimb.2016.12.013
Official URL: https://doi.org/10.1016/j.nimb.2016.12.013
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