Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L. (2014)
Towards forming-free resistive switching in oxygen engineered HfO2−x.
In: Applied Physics Letters, 104 (6)
doi: 10.1063/1.4864653
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2− x thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO2− x thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Sharath, S. U. ; Bertaud, T. ; Kurian, J. ; Hildebrandt, E. ; Walczyk, C. ; Calka, P. ; Zaumseil, P. ; Sowinska, M. ; Walczyk, D. ; Gloskovskii, A. ; Schroeder, T. ; Alff, L. |
| Art des Eintrags: | Bibliographie |
| Titel: | Towards forming-free resistive switching in oxygen engineered HfO2−x |
| Sprache: | Englisch |
| Publikationsjahr: | 10 Februar 2014 |
| Verlag: | AIP Publishing LLC |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | Applied Physics Letters |
| Jahrgang/Volume einer Zeitschrift: | 104 |
| (Heft-)Nummer: | 6 |
| DOI: | 10.1063/1.4864653 |
| Kurzbeschreibung (Abstract): | We have investigated the resistive switching behavior in stoichiometric HfO2 and oxygen-deficient HfO2− x thin films grown on TiN electrodes using reactive molecular beam epitaxy. Oxygen defect states were controlled by the flow of oxygen radicals during thin film growth. Hard X-ray photoelectron spectroscopy confirmed the presence of sub-stoichiometric hafnium oxide and defect states near the Fermi level. The oxygen deficient HfO2− x thin films show bipolar switching with an electroforming occurring at low voltages and low operating currents, paving the way for almost forming-free devices for low-power applications. |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Dünne Schichten 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 17 Nov 2014 13:13 |
| Letzte Änderung: | 17 Nov 2014 13:13 |
| PPN: | |
| Sponsoren: | IHP and TU Darmstadt authors are grateful for financial support by the Deutsche Forschungsgemeinschaft (DFG) under Project No. SCHR1123/7-1., Funding by the Federal Ministry of Education and Research (BMBF) under Contract Nos. 05KS7UM1, 05K10UMA, 05KS7WW3, and 05K10WW1 was gratefully acknowledged., P. Calka is grateful to AvH foundation for granting an AvH PostDoc fellowship. |
| Export: | |
| Suche nach Titel in: | TUfind oder in Google |
 |
Frage zum Eintrag |
Optionen (nur für Redakteure)
 |
Redaktionelle Details anzeigen |
Drucken
Impressum