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Number of items: 4.

Niu, Gang and Calka, Pauline and Huang, Peng and Sharath, Sankaramangalam Ulhas and Petzold, Stefan and Gloskovskii, Andrei and Fröhlich, Karol and Zhao, Yudi and Kang, Jinfeng and Schubert, Markus Andreas and Bärwolf, Florian and Ren, Wei and Ye, Zuo-Guang and Perez, Eduardo and Wenger, Christian and Alff, Lambert and Schroeder, Thomas (2019):
Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy.
In: Materials Research Letters, 7 (3), pp. 117-123. Taylor & Francis Inc., Philadelphia, PA, USA, ISSN 2166-3831,
DOI: 10.1080/21663831.2018.1561535,

Sharath, Sankaramangalam Ulhas and Vogel, Stefan and Molina-Luna, Leopoldo and Hildebrandt, Erwin and Wenger, Christian and Kurian, Jose and Duerrschnabel, Michael and Niermann, Tore and Niu, Gang and Calka, Pauline and Lehmann, Michael and Kleebe, Hans-Joachim and Schroeder, Thomas and Alff, Lambert (2017):
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO x based Memristive Devices.
In: Advanced Functional Materials, 27 (32), p. 1700432. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, ISSN 1616301X,
DOI: 10.1002/adfm.201700432,

Niu, Gang and Calka, Pauline and Auf der Maur, Matthias and Santoni, Francesco and Guha, Subhajit and Fraschke, Mirko and Hamoumou, Philippe and Gautier, Brice and Perez, Eduardo and Walczyk, Christian and Wenger, Christian and Di Carlo, Aldo and Alff, Lambert and Schroeder, Thomas (2016):
Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance.
In: Scientific Reports, 6, p. 25757. NATURE PUBLISHING GROUP, ENGLAND, ISSN 2045-2322,

Sowinska, Malgorzata and Bertaud, Thomas and Walczyk, Damian and Thiess, Sebastian and Calka, Pauline and Alff, Lambert and Walczyk, Christian and Schroeder, Thomas (2014):
In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells.
In: Journal of Applied Physics, 115 (20), p. 204509. AIP Publishing LLC, ISSN 0021-8979,

This list was generated on Sat Jun 12 02:16:40 2021 CEST.