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In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

Sowinska, Malgorzata and Bertaud, Thomas and Walczyk, Damian and Thiess, Sebastian and Calka, Pauline and Alff, Lambert and Walczyk, Christian and Schroeder, Thomas (2014):
In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells.
In: Journal of Applied Physics, AIP Publishing LLC, p. 204509, 115, (20), ISSN 0021-8979,
[Online-Edition: http://dx.doi.org/10.1063/1.4879678],
[Article]

Abstract

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO2 interface chemistry and physics of resistive switching Ti/HfO2/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO2 interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO2 interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

Item Type: Article
Erschienen: 2014
Creators: Sowinska, Malgorzata and Bertaud, Thomas and Walczyk, Damian and Thiess, Sebastian and Calka, Pauline and Alff, Lambert and Walczyk, Christian and Schroeder, Thomas
Title: In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells
Language: English
Abstract:

In this study, direct experimental materials science evidence of the important theoretical prediction for resistive random access memory (RRAM) technologies that a critical amount of oxygen vacancies is needed to establish stable resistive switching in metal-oxide-metal samples is presented. In detail, a novel in-operando hard X-ray photoelectron spectroscopy technique is applied to non-destructively investigates the influence of the current compliance and direct current voltage sweep cycles on the Ti/HfO2 interface chemistry and physics of resistive switching Ti/HfO2/TiN cells. These studies indeed confirm that current compliance is a critical parameter to control the amount of oxygen vacancies in the conducting filaments in the oxide layer during the RRAM cell operation to achieve stable switching. Furthermore, clear carbon segregation towards the Ti/HfO2 interface under electrical stress is visible. Since carbon impurities impact the oxygen vacancy defect population under resistive switching, this dynamic carbon segregation to the Ti/HfO2 interface is suspected to negatively influence RRAM device endurance. Therefore, these results indicate that the RRAM materials engineering needs to include all impurities in the dielectric layer in order to achieve reliable device performance.

Journal or Publication Title: Journal of Applied Physics
Volume: 115
Number: 20
Publisher: AIP Publishing LLC
Uncontrolled Keywords: Magnetization reversals, Electrical resistivity, Carbon, Vacancies, Electric currents
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 07 Jul 2014 12:30
Official URL: http://dx.doi.org/10.1063/1.4879678
Identification Number: doi:10.1063/1.4879678
Funders: IHP and TU Darmstadt authors are grateful for financial support by the Deutsche Forschungsgemeinschaft (DFG) under Project No. SCHR1123/7-1., Funding by the Federal Ministry of Education and Research (BMBF) under Contract Nos. 05KS7UM1, 05K10UMA, 05KS7WW3, and 05K10WW1 was gratefully acknowledged., P. Calka is grateful to AvH foundation for granting an AvH PostDoc fellowship.
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