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Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories

Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Hildebrandt, E. ; Bertaud, T. ; Walczyk, C. ; Calka, P. ; Schroeder, T. ; Alff, L. (2014)
Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories.
In: Applied Physics Letters, 105 (7)
doi: 10.1063/1.4893605
Article, Bibliographie

Abstract

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO2 surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

Item Type: Article
Erschienen: 2014
Creators: Sharath, S. U. ; Kurian, J. ; Komissinskiy, P. ; Hildebrandt, E. ; Bertaud, T. ; Walczyk, C. ; Calka, P. ; Schroeder, T. ; Alff, L.
Type of entry: Bibliographie
Title: Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
Language: English
Date: 2014
Publisher: AIP Publishing LLC
Journal or Publication Title: Applied Physics Letters
Volume of the journal: 105
Issue Number: 7
DOI: 10.1063/1.4893605
Abstract:

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO2 surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

Divisions: 11 Department of Materials and Earth Sciences > Material Science > Advanced Thin Film Technology
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 17 Nov 2014 13:23
Last Modified: 17 Nov 2014 13:23
PPN:
Funders: IHP and TU Darmstadt authors are grateful for financial support by the Deutsche Forschungsgemeinschaft (DFG) under Project No. SCHR1123/7-1., Funding by the Federal Ministry of Education and Research (BMBF) under Contracts 05KS7UM1, 05K10UMA, 05KS7WW3, 16ES0250, and 05K10WW1 is also gratefully acknowledged., We thank funding by ENIAC JU within the project PANACHE., P. Calka is grateful to AvH foundation for granting an AvH PostDoc fellowship.
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