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Number of items: 11.

Saglam, Mustafa ; Bozzi, M. ; Megej, A. ; Rodriguez-Girones, M. ; Perregrini, L. ; Hartnagel, H. L. (2001):
Characterization of heterostructure-barrier-varactors for frequency multiplication.
22, In: International journal of infrared and millimeter waves, [Article]

Ichizli, Victoria M. ; Rodriguez-Girones, M. ; Lin, Ch.-I. ; Szeliga, P. ; Hartnagel, H. L. (2001):
The effect of glas plasma on the deposition quality of Schottky metals and interconnect metallisation for planar diodes structure for THz applications.
In: International Conference on THz Electronics <9, 2001, Charlottesville, Virginia>: Proceedings, [Conference or Workshop Item]

Saglam, Mustafa ; Bozzi, M. ; Domoto, C. ; Rodriguez-Girones, M. ; Perregrini, L. ; Hartnagel, H. L. (2000):
Al07Ga03As/GaAs HBV for 255 GHz tripling operation.
In: Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe <24, 2000, Aegean Sea, Greece>: Proceedings, [Conference or Workshop Item]

Saglam, Mustafa ; Bozzi, M. ; Domoto, C. ; Megej, A. ; Rodriguez-Girones, M. ; Perregrini, L. ; Hartnagel, H. L. (2000):
AlGaAs HBV performance in frequency tripling at 255 GHz.
In: GAAS 2000: Gallium Arsenide and other Semiconductor Application Symposium <2000, La Defense, Paris>: Proceedings, [Conference or Workshop Item]

Saglam, Mustafa ; Bozzi, M. ; Rodriguez-Girones, M. ; Lin, C.-I. ; Megej, A. ; Perregrini, L. ; Hartnagel, H. L. (2000):
Characterization of heterostructure barrier varactors for 255 GHz tripling operation.
In: International Conference on Infrared and Millimeter Waves <25, 2000, Beijing, China>: Proceedings, [Conference or Workshop Item]

Miranda-Pantoja, J. M. ; Lin, C.-I. ; Brandt, M. ; Rodriguez-Girones, M. ; Hartnagel, H. L. ; Sebastian, J. L. (2000):
Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces.
21, In: IEEE Electron device letters, [Article]

Hartnagel, Hans L. ; Lin, C. I. ; Rodriguez-Girones, M. ; Ichizli, V. ; Saglam, M. ; Szeliga, P. (2000):
Recent development in device technology for integrated THz circuits.
In: GAAS 2000: Gallium Arsenide and other Semiconductors Application Symposium <2000, La Defense, Paris>: Proceedings, [Conference or Workshop Item]

Bozzi, M. ; Saglam, M. ; Rodriguez-Girones, M. ; Perregrini, L. ; Hartnagel, H. L. (2000):
A new evolutionary approach for the analysis and optimization of THz nonlinear circuits.
In: International Conference on Terahertz Electronics <8, 2000, Darmstadt>. - Berlin, Offenbach: VDE-Verl., 2000, Berlin, Offenbach, VDE-Verl., [Conference or Workshop Item]

Simon, Ansgar ; Lin, Chih-I. ; Rodriguez-Girones, M. ; Hartnagel, H.-L. ; Zimmermann, P. ; Zimmermann, R. ; Henneberger, R. (1998):
High efficiency frequency multipliers using substrateless Schottky diodes.
In: International Conference Terahertz Electronics <6, 1998, Leeds, UK>: Proceedings. S. 72-73, [Conference or Workshop Item]

Lin, Chih-I. ; Simon, A. ; Rodriguez-Girones, M. ; Hartnagel, H.-L. ; Zimmermann, P. ; Zimmermann, R. ; Henneberger, R. (1998):
Planar Schottky diodes for submillimeter wave applications.
In: International Conference Terahertz Electronics <6, 1998, Leeds, UK>: Proceedings. S. 135-138, [Conference or Workshop Item]

Lin, Chih-I. ; Simon, A. ; Rodriguez-Girones, M. ; Hartnagel, H. L. ; Zimmermann, P. ; Zimmermann, R. (1997):
Substrateless Schottky diodes for THz applications.
In: International Symposium on Space Terahertz Technology <8, 1997, Harvard Univ., Cambridge, Mass.>: Proceedings, [Conference or Workshop Item]

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