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Number of items: 11.

Saglam, Mustafa and Bozzi, M. and Megej, A. and Rodriguez-Girones, M. and Perregrini, L. and Hartnagel, H. L. (2001):
Characterization of heterostructure-barrier-varactors for frequency multiplication.
In: International journal of infrared and millimeter waves, 22, [Article]

Ichizli, Victoria M. and Rodriguez-Girones, M. and Lin, Ch.-I. and Szeliga, P. and Hartnagel, H. L. (2001):
The effect of glas plasma on the deposition quality of Schottky metals and interconnect metallisation for planar diodes structure for THz applications.
In: International Conference on THz Electronics <9, 2001, Charlottesville, Virginia>: Proceedings, [Conference or Workshop Item]

Saglam, Mustafa and Bozzi, M. and Domoto, C. and Rodriguez-Girones, M. and Perregrini, L. and Hartnagel, H. L. (2000):
Al07Ga03As/GaAs HBV for 255 GHz tripling operation.
In: Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe <24, 2000, Aegean Sea, Greece>: Proceedings, [Conference or Workshop Item]

Saglam, Mustafa and Bozzi, M. and Domoto, C. and Megej, A. and Rodriguez-Girones, M. and Perregrini, L. and Hartnagel, H. L. (2000):
AlGaAs HBV performance in frequency tripling at 255 GHz.
In: GAAS 2000: Gallium Arsenide and other Semiconductor Application Symposium <2000, La Defense, Paris>: Proceedings, [Conference or Workshop Item]

Saglam, Mustafa and Bozzi, M. and Rodriguez-Girones, M. and Lin, C.-I. and Megej, A. and Perregrini, L. and Hartnagel, H. L. (2000):
Characterization of heterostructure barrier varactors for 255 GHz tripling operation.
In: International Conference on Infrared and Millimeter Waves <25, 2000, Beijing, China>: Proceedings, [Conference or Workshop Item]

Miranda-Pantoja, J. M. and Lin, C.-I. and Brandt, M. and Rodriguez-Girones, M. and Hartnagel, H. L. and Sebastian, J. L. (2000):
Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces.
In: IEEE Electron device letters, 21, [Article]

Hartnagel, Hans L. and Lin, C. I. and Rodriguez-Girones, M. and Ichizli, V. and Saglam, M. and Szeliga, P. (2000):
Recent development in device technology for integrated THz circuits.
In: GAAS 2000: Gallium Arsenide and other Semiconductors Application Symposium <2000, La Defense, Paris>: Proceedings, [Conference or Workshop Item]

Bozzi, M. and Saglam, M. and Rodriguez-Girones, M. and Perregrini, L. and Hartnagel, H. L. (2000):
A new evolutionary approach for the analysis and optimization of THz nonlinear circuits.
Berlin, Offenbach, VDE-Verl., In: International Conference on Terahertz Electronics <8, 2000, Darmstadt>. - Berlin, Offenbach: VDE-Verl., 2000, [Conference or Workshop Item]

Simon, Ansgar and Lin, Chih-I. and Rodriguez-Girones, M. and Hartnagel, H.-L. and Zimmermann, P. and Zimmermann, R. and Henneberger, R. (1998):
High efficiency frequency multipliers using substrateless Schottky diodes.
In: International Conference Terahertz Electronics <6, 1998, Leeds, UK>: Proceedings. S. 72-73, [Conference or Workshop Item]

Lin, Chih-I. and Simon, A. and Rodriguez-Girones, M. and Hartnagel, H.-L. and Zimmermann, P. and Zimmermann, R. and Henneberger, R. (1998):
Planar Schottky diodes for submillimeter wave applications.
In: International Conference Terahertz Electronics <6, 1998, Leeds, UK>: Proceedings. S. 135-138, [Conference or Workshop Item]

Lin, Chih-I. and Simon, A. and Rodriguez-Girones, M. and Hartnagel, H. L. and Zimmermann, P. and Zimmermann, R. (1997):
Substrateless Schottky diodes for THz applications.
In: International Symposium on Space Terahertz Technology <8, 1997, Harvard Univ., Cambridge, Mass.>: Proceedings, [Conference or Workshop Item]

This list was generated on Tue Jul 16 02:17:49 2019 CEST.