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C+-energy-dependent residual ion damage in GaAs: C grown by the low-energy ion-beam doping method

Iida, T. and Makita, and Shima, and Kimura, and Horn, and Hartnagel, and Uekusa, (1996):
C+-energy-dependent residual ion damage in GaAs: C grown by the low-energy ion-beam doping method.
In: Journal of applied physics. 80 (1996), 7, [Article]

Item Type: Article
Erschienen: 1996
Creators: Iida, T. and Makita, and Shima, and Kimura, and Horn, and Hartnagel, and Uekusa,
Title: C+-energy-dependent residual ion damage in GaAs: C grown by the low-energy ion-beam doping method
Language: English
Journal or Publication Title: Journal of applied physics. 80 (1996), 7
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:04
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