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Number of items: 3.

Gottwald, P. and Kräutle, H. and Szentpali, B. and Hartnagel, H. L. (2001):
Results on passivation of InP by photo-CVD SiO2 and SiNx obtained by using the low-frequency noise measurement technique.
1, In: Fluctuation and noise letters, pp. S. L35-L43. [Article]

Gottwald, P. and Kräutle, and Szentpáli, and Kincses, and Hartnagel, (1997):
Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique.
In: Solid-state electronics. 41 (1997), No. 4, S. 539-545, [Article]

Gottwald, P. and Riemenschneider, and Szentpali, and Hartnagel, and Kincses, and Ruszinko, (1995):
Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements.
In: Solid state electronics. 38 (1995), Nr. 2, S. 413-417, [Article]

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