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Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique

Gottwald, P. and Kräutle, and Szentpáli, and Kincses, and Hartnagel, (1997):
Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique.
In: Solid-state electronics. 41 (1997), No. 4, S. 539-545, [Article]

Item Type: Article
Erschienen: 1997
Creators: Gottwald, P. and Kräutle, and Szentpáli, and Kincses, and Hartnagel,
Title: Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique
Language: English
Journal or Publication Title: Solid-state electronics. 41 (1997), No. 4, S. 539-545
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:04
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