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Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique

Gottwald, P. ; Kräutle, ; Szentpali, B. ; Kincses, Z. ; Hartnagel, H. L. (1997):
Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique.
In: Solid state electronics, 41 (4), pp. 539-545. Elsevier, ISSN 0038-1101,
[Article]

Item Type: Article
Erschienen: 1997
Creators: Gottwald, P. ; Kräutle, ; Szentpali, B. ; Kincses, Z. ; Hartnagel, H. L.
Title: Damage characterization of InP after reactive ion etching using the low-frequency noise measurement technique
Language: English
Journal or Publication Title: Solid state electronics
Journal Volume: 41
Issue Number: 4
Publisher: Elsevier
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:04
License: [undefiniert]
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