Gottwald, P. ; Riemenschneider, R. ; Szentpali, B. ; Hartnagel, H. L. ; Kincses, Z. ; Ruszinko, M. (1995):
Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements.
In: Solid state electronics, 38 (2), pp. 413-417. Elsevier, ISSN 0038-1101,
DOI: https://ui.adsabs.harvard.edu/link_gateway/1995SSEle..38..413G/doi:10.1016/0038-1101(94)00100-T,
[Article]
| Item Type: | Article |
|---|---|
| Erschienen: | 1995 |
| Creators: | Gottwald, P. ; Riemenschneider, R. ; Szentpali, B. ; Hartnagel, H. L. ; Kincses, Z. ; Ruszinko, M. |
| Title: | Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements |
| Language: | English |
| Journal or Publication Title: | Solid state electronics |
| Journal Volume: | 38 |
| Issue Number: | 2 |
| Publisher: | Elsevier |
| Divisions: | 18 Department of Electrical Engineering and Information Technology 18 Department of Electrical Engineering and Information Technology > Microwave Electronics |
| Date Deposited: | 19 Nov 2008 16:05 |
| DOI: | https://ui.adsabs.harvard.edu/link_gateway/1995SSEle..38..413G/doi:10.1016/0038-1101(94)00100-T |
| License: | [undefiniert] |
| Export: | |
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