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Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements

Gottwald, P. ; Riemenschneider, R. ; Szentpali, B. ; Hartnagel, H. L. ; Kincses, Z. ; Ruszinko, M. (1995):
Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements.
In: Solid state electronics, 38 (2), pp. 413-417. Elsevier, ISSN 0038-1101,
DOI: https://ui.adsabs.harvard.edu/link_gateway/1995SSEle..38..413G/doi:10.1016/0038-1101(94)00100-T,
[Article]

Item Type: Article
Erschienen: 1995
Creators: Gottwald, P. ; Riemenschneider, R. ; Szentpali, B. ; Hartnagel, H. L. ; Kincses, Z. ; Ruszinko, M.
Title: Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements
Language: English
Journal or Publication Title: Solid state electronics
Journal Volume: 38
Issue Number: 2
Publisher: Elsevier
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:05
DOI: https://ui.adsabs.harvard.edu/link_gateway/1995SSEle..38..413G/doi:10.1016/0038-1101(94)00100-T
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