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Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements

Gottwald, P. and Riemenschneider, and Szentpali, and Hartnagel, and Kincses, and Ruszinko, (1995):
Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements.
In: Solid state electronics. 38 (1995), Nr. 2, S. 413-417, [Article]

Item Type: Article
Erschienen: 1995
Creators: Gottwald, P. and Riemenschneider, and Szentpali, and Hartnagel, and Kincses, and Ruszinko,
Title: Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements
Language: English
Journal or Publication Title: Solid state electronics. 38 (1995), Nr. 2, S. 413-417
Divisions: 18 Department of Electrical Engineering and Information Technology
18 Department of Electrical Engineering and Information Technology > Microwave Electronics
Date Deposited: 19 Nov 2008 16:05
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