1987

Kunst, M. ; Jaegermann, W. ; Schmeisser, D. (1987)
Chemical etching of p-type Si(lOO) by K2Cr2O7: A combined investigation by TRMC, XPS, UPS and LEED.
In: Applied Physics A Solids and Surfaces, 42 (1)
doi: 10.1007/BF00618159
Artikel, Bibliographie

Sander, M. ; Lewerenz, H. J. ; Jaegermann, W. ; Schmeisser, D. (1987)
Modellversuche zu Grenzflächenreaktionen an n-CuInSe2 im UHV.
In: Fresenius Zeitschrift für Analytische Chemie, 329 (2-3)
doi: 10.1007/BF00469173
Artikel, Bibliographie

Sander, M. ; Lewerenz, H.-J. ; Jaegermann, W. ; Schmeisser, D. (1987)
Simulation of electrochemical interface properties: UHV-investigation on CuInSe2 and CuInS2.
In: Berichte der Bunsengesellschaft für Physikalische Chemie, 91 (4)
doi: 10.1002/bbpc.19870910438
Artikel, Bibliographie

Jaegermann, W. ; Schmeisser, D. (1987)
Simulation of photoactive semiconductor/electrolyte interfaces in the ultrahigh vacuum by adsorption of H2O and halogens on layered semiconductors.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 5 (4)
doi: 10.1116/1.574647
Artikel, Bibliographie

1986

Jaegermann, W. ; Schmeisser, D. (1986)
Reactivity of layer type transition metal chalcogenides towards oxidation.
In: Surface Science, 165 (1)
doi: 10.1016/0039-6028(86)90666-7
Artikel, Bibliographie