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Number of items: 5.

Kunst, M. and Jaegermann, W. and Schmeisser, D. (1987):
Chemical etching of p-type Si(lOO) by K2Cr2O7: A combined investigation by TRMC, XPS, UPS and LEED.
In: Applied Physics A Solids and Surfaces, 42 (1), pp. 57-64, ISSN 0721-7250,
[Online-Edition: http://dx.doi.org/10.1007/BF00618159],

Sander, M. and Lewerenz, H. J. and Jaegermann, W. and Schmeisser, D. (1987):
Modellversuche zu Grenzflächenreaktionen an n-CuInSe2 im UHV.
In: Fresenius Zeitschrift für Analytische Chemie, 329 (2-3), pp. 367-369, ISSN 0016-1152,
[Online-Edition: http://dx.doi.org/10.1007/BF00469173],

Sander, M. and Lewerenz, H.-J. and Jaegermann, W. and Schmeisser, D. (1987):
Simulation of electrochemical interface properties: UHV-investigation on CuInSe2 and CuInS2.
In: Berichte der Bunsengesellschaft für Physikalische Chemie, 91 (4), pp. 416-419, ISSN 00059021,
[Online-Edition: http://dx.doi.org/10.1002/bbpc.19870910438],

Jaegermann, W. and Schmeisser, D. (1987):
Simulation of photoactive semiconductor/electrolyte interfaces in the ultrahigh vacuum by adsorption of H2O and halogens on layered semiconductors.
In: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 5 (4), p. 627, ISSN 07342101,
[Online-Edition: http://dx.doi.org/10.1116/1.574647],

Jaegermann, W. and Schmeisser, D. (1986):
Reactivity of layer type transition metal chalcogenides towards oxidation.
In: Surface Science, 165 (1), pp. 143-160, ISSN 00396028,
[Online-Edition: http://dx.doi.org/10.1016/0039-6028(86)90666-7],

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