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Number of items: 4.

Aguirre, Fernando Leonel ; Piros, Eszter ; Kaiser, Nico ; Vogel, Tobias ; Petzold, Stephan ; Gehrunger, Jonas ; Oster, Timo ; Hochberger, Christian ; Suñé, Jordi ; Alff, Lambert ; Miranda, Enrique (2022)
Fast Fitting of the Dynamic Memdiode Model to the Conduction Characteristics of RRAM Devices Using Convolutional Neural Networks.
In: Micromachines, 2022, 13 (11)
doi: 10.26083/tuprints-00022979
Article, Secondary publication, Publisher's Version

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wengerter, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020)
Neuromorphic Computing: Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11)
doi: 10.1002/aelm.202070044
Article, Bibliographie

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020)
Tailoring the Switching Dynamics in Yttrium Oxide-Based RRAM Devices by Oxygen Engineering: From Digital to Multi-Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 2020
doi: 10.1002/aelm.202000439
Article, Bibliographie

Petzold, Stefan ; Piros, Eszter ; Eilhardt, Robert ; Zintler, Alexander ; Vogel, Tobias ; Kaiser, Nico ; Radetinac, Aldin ; Komissinskiy, Philipp ; Jalaguier, Eric ; Nolot, Emmanuel ; Charpin-Nicolle, Christelle ; Wenger, Christian ; Molina-Luna, Leopoldo ; Miranda, Enrique ; Alff, Lambert (2020)
Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching.
In: Advanced Electronic Materials, 6 (11)
doi: 10.1002/aelm.202000439
Article, Bibliographie

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