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Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory

Petzold, S. ; Piros, E. ; Sharath, S. U. ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, C. ; Alff, Lambert (2019)
Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory.
In: Semiconductor Science and Technology
doi: 10.1088/1361-6641/ab220f
Article, Bibliographie

Item Type: Article
Erschienen: 2019
Creators: Petzold, S. ; Piros, E. ; Sharath, S. U. ; Zintler, Alexander ; Hildebrandt, Erwin ; Molina-Luna, Leopoldo ; Wenger, C. ; Alff, Lambert
Type of entry: Bibliographie
Title: Gradual Reset and Set Characteristics in Yttrium Oxide based Resistive Random Access Memory
Language: English
Date: 16 May 2019
Journal or Publication Title: Semiconductor Science and Technology
DOI: 10.1088/1361-6641/ab220f
URL / URN: https://iopscience.iop.org/article/10.1088/1361-6641/ab220f
Divisions: 11 Department of Materials and Earth Sciences
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences > Material Science > Advanced Electron Microscopy (aem)
Date Deposited: 20 May 2019 05:31
Last Modified: 20 May 2019 05:31
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