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Number of items: 8.

Freund, Dirk and Kostka, (2008):
A new physical compact model of CLBTs for circuit simulation including two-dimensional calculations.
In: Simulation of semiconductor devices and processes. Vol. 6. Hrsg.: H. Ryssel (u.a.) S. 344-347, [Book Section]

Krawczyk, S. K. and Bejar, and Kostka, and Nuban, and Warta, and Joly, and Blanchet, (1997):
New scanning photoluminescence technique for quantitative mapping of the lifetime and of the doping density in processed silicon wafers.
In: International Conference on Defect Recognition and Image Processing in Semiconductors <7, 1997, Templin, Germany>: Proceedings, [Conference or Workshop Item]

Klös, Alexander and Freund, and Kostka, (1997):
Physics-based, predictive compact modeling of lateral bipolar transistors and shortchannel MOSFETs by conformal mappings.
In: VDI/VDE International Congress on Microelectronics <1997, Munich, Germany>: Proceedings. S. 53-60, [Conference or Workshop Item]

Schepp, Oliver and Kostka, (1997):
An electrothermal model for DMOS devices in ELDO applied to the simulation of an integrated H-bridge.
In: European Conference on Power Electronics and Applications <7, 1997, Trondheim, Norway>: Proceedings, [Conference or Workshop Item]

Freund, Dirk and Kostka, and Kostka, (1996):
A new physical, quasi 3-D, compact model of lateral bipolar transistors for circuit simulation.
In: IEEE Bipolar Circuit and Technology Meeting <1996, Minneapolis>: Proceedings, [Conference or Workshop Item]

Klös, Alexander and Kostka, and Kostka, (1996):
A new physics based, predictive compact model for small-geometry MOSFET's including two-dimensional calculations with a close link to process and layout data.
In: IEEE International Electron Device Meeting IEDMS '96 <1996, San Francisco>: Techn. Digest. S. 147-150, [Conference or Workshop Item]

Freund, Dirk and Kostka, (1995):
An analytical model of the V BE-dependence of current splitting in CMOS-compativle lateral bipolar transistors.
In: Solid-state electronics. 38 (1995), No. 8, S. 1543-1546, [Article]

Klös, Alexander and Kostka, (1995):
A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs.
In: Simulation of semiconductor devices and processes. Vol. 6. Hrsg.: H. Ryssel (u.a.) S. 218-221, Berlin, Heidelberg (u.a.): Springer, 1995,
Berlin, Heidelberg (u.a.), Springer, [Book Section]

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