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Number of items: 7.

Klös, Alexander (1997):
Analytische Modellierung mehrdimensionaler Effekte in Submikron-MOSFET's.
261, Düsseldorf: VDI-Verl., 1997. XV, 169 S.,
Düsseldorf, VDI-Verl, TU Darmstadt, [Ph.D. Thesis]

Klös, Alexander and Freund, and Kostka, (1997):
Physics-based, predictive compact modeling of lateral bipolar transistors and shortchannel MOSFETs by conformal mappings.
In: VDI/VDE International Congress on Microelectronics <1997, Munich, Germany>: Proceedings. S. 53-60, [Conference or Workshop Item]

Klös, Alexander (1996):
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling.
In: Solid-state electronics. 39 (1996), S. 1761-1775, [Article]

Klös, Alexander (1996):
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling.
In: Solid-state electronics. 39 (1996), S. 1761-1775, [Article]

Klös, Alexander and Kostka, and Kostka, (1996):
A new physics based, predictive compact model for small-geometry MOSFET's including two-dimensional calculations with a close link to process and layout data.
In: IEEE International Electron Device Meeting IEDMS '96 <1996, San Francisco>: Techn. Digest. S. 147-150, [Conference or Workshop Item]

Klös, Alexander (1996):
A physics based, analytical model for the threshold voltage in MOSFET's using a unified approach to account for short- and narrow-channel effects.
In: International Electron Devices Meeting <1996, Hsinchu, Taiwan>: Proceedings. S. 285-288, [Conference or Workshop Item]

Klös, Alexander and Kostka, (1995):
A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs.
In: Simulation of semiconductor devices and processes. Vol. 6. Hrsg.: H. Ryssel (u.a.) S. 218-221, Berlin, Heidelberg (u.a.): Springer, 1995,
Berlin, Heidelberg (u.a.), Springer, [Book Section]

This list was generated on Thu Dec 5 09:33:35 2019 CET.