TU Darmstadt / ULB / TUbiblio

A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs

Klös, Alexander and Kostka, (1995):
A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs.
In: Simulation of semiconductor devices and processes. Vol. 6. Hrsg.: H. Ryssel (u.a.) S. 218-221, Berlin, Heidelberg (u.a.): Springer, 1995,
Berlin, Heidelberg (u.a.), Springer, [Book Section]

Item Type: Book Section
Erschienen: 1995
Creators: Klös, Alexander and Kostka,
Title: A fully 2D, analytical model for the geometry and voltage dependence of treshold voltage in submicron MOSFETs
Language: English
Title of Book: Simulation of semiconductor devices and processes. Vol. 6. Hrsg.: H. Ryssel (u.a.) S. 218-221
Place of Publication: Berlin, Heidelberg (u.a.)
Publisher: Springer
Edition: Berlin, Heidelberg (u.a.): Springer, 1995
Divisions: 18 Department of Electrical Engineering and Information Technology
Date Deposited: 19 Nov 2008 15:58
License: [undefiniert]
Export:
Suche nach Titel in: TUfind oder in Google
Send an inquiry Send an inquiry

Options (only for editors)
Show editorial Details Show editorial Details