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Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well

Alaei, H. R. and Riedel, Ralf and Younesi, M. :
Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well.
In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 16 (1-2) pp. 25-30. ISSN 1454-4164
[Article] , (2014)

Abstract

We report on the intersubband transitions at different temperatures in the InGaN/GaN Quantum Well (QW) where they have two couple thick layers with step doping around their active region. These couple step doped layers by strong screening effect of free carriers can reduce the Quantum Confined Stark Effect (QCSE) induced by strain in the QW then blue shifts as large as 70 meV for intersubband transitions is observed at room temperature. The such improvement in optical property is attributed to an increase in the injection of electrons from Si step-doped GaN barrier layers into the well also increase in the hole accumulation due to higher valance band offset of barriers. In theory, for subband calculations we solved Schrodinger-Poisson equations self-consistently by numerov method where the Exchange-correlation, Hartree interaction and internal electric fields were considered for accurate subbands calculation.

Item Type: Article
Erschienen: 2014
Creators: Alaei, H. R. and Riedel, Ralf and Younesi, M.
Title: Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well
Language: English
Abstract:

We report on the intersubband transitions at different temperatures in the InGaN/GaN Quantum Well (QW) where they have two couple thick layers with step doping around their active region. These couple step doped layers by strong screening effect of free carriers can reduce the Quantum Confined Stark Effect (QCSE) induced by strain in the QW then blue shifts as large as 70 meV for intersubband transitions is observed at room temperature. The such improvement in optical property is attributed to an increase in the injection of electrons from Si step-doped GaN barrier layers into the well also increase in the hole accumulation due to higher valance band offset of barriers. In theory, for subband calculations we solved Schrodinger-Poisson equations self-consistently by numerov method where the Exchange-correlation, Hartree interaction and internal electric fields were considered for accurate subbands calculation.

Journal or Publication Title: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
Volume: 16
Number: 1-2
Publisher: NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA
Uncontrolled Keywords: Intersubband, Transition, Quantum Well, InGaN/GaN, Self-consistent, Photoluminescence
Divisions: 11 Department of Materials and Earth Sciences > Material Science > Dispersive Solids
11 Department of Materials and Earth Sciences > Material Science
11 Department of Materials and Earth Sciences
Date Deposited: 25 Apr 2014 08:44
Funders: Islamic Azad University, Varamin-Pishva Branch
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