Alaei, H. R. ; Riedel, Ralf ; Younesi, M. (2014)
Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well.
In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 16 (1-2)
Artikel, Bibliographie
Kurzbeschreibung (Abstract)
We report on the intersubband transitions at different temperatures in the InGaN/GaN Quantum Well (QW) where they have two couple thick layers with step doping around their active region. These couple step doped layers by strong screening effect of free carriers can reduce the Quantum Confined Stark Effect (QCSE) induced by strain in the QW then blue shifts as large as 70 meV for intersubband transitions is observed at room temperature. The such improvement in optical property is attributed to an increase in the injection of electrons from Si step-doped GaN barrier layers into the well also increase in the hole accumulation due to higher valance band offset of barriers. In theory, for subband calculations we solved Schrodinger-Poisson equations self-consistently by numerov method where the Exchange-correlation, Hartree interaction and internal electric fields were considered for accurate subbands calculation.
| Typ des Eintrags: | Artikel |
|---|---|
| Erschienen: | 2014 |
| Autor(en): | Alaei, H. R. ; Riedel, Ralf ; Younesi, M. |
| Art des Eintrags: | Bibliographie |
| Titel: | Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well |
| Sprache: | Englisch |
| Publikationsjahr: | Januar 2014 |
| Verlag: | NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA |
| Titel der Zeitschrift, Zeitung oder Schriftenreihe: | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS |
| Jahrgang/Volume einer Zeitschrift: | 16 |
| (Heft-)Nummer: | 1-2 |
| Kurzbeschreibung (Abstract): | We report on the intersubband transitions at different temperatures in the InGaN/GaN Quantum Well (QW) where they have two couple thick layers with step doping around their active region. These couple step doped layers by strong screening effect of free carriers can reduce the Quantum Confined Stark Effect (QCSE) induced by strain in the QW then blue shifts as large as 70 meV for intersubband transitions is observed at room temperature. The such improvement in optical property is attributed to an increase in the injection of electrons from Si step-doped GaN barrier layers into the well also increase in the hole accumulation due to higher valance band offset of barriers. In theory, for subband calculations we solved Schrodinger-Poisson equations self-consistently by numerov method where the Exchange-correlation, Hartree interaction and internal electric fields were considered for accurate subbands calculation. |
| Freie Schlagworte: | Intersubband, Transition, Quantum Well, InGaN/GaN, Self-consistent, Photoluminescence |
| Fachbereich(e)/-gebiet(e): | 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft > Fachgebiet Disperse Feststoffe 11 Fachbereich Material- und Geowissenschaften > Materialwissenschaft 11 Fachbereich Material- und Geowissenschaften |
| Hinterlegungsdatum: | 25 Apr 2014 08:44 |
| Letzte Änderung: | 25 Apr 2014 08:44 |
| PPN: | |
| Sponsoren: | Islamic Azad University, Varamin-Pishva Branch |
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