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Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well

Alaei, H. R. ; Riedel, Ralf ; Younesi, M. :
Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well.
In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 16 (1-2) pp. 25-30. ISSN 1454-4164
[Artikel], (2014)

Kurzbeschreibung (Abstract)

We report on the intersubband transitions at different temperatures in the InGaN/GaN Quantum Well (QW) where they have two couple thick layers with step doping around their active region. These couple step doped layers by strong screening effect of free carriers can reduce the Quantum Confined Stark Effect (QCSE) induced by strain in the QW then blue shifts as large as 70 meV for intersubband transitions is observed at room temperature. The such improvement in optical property is attributed to an increase in the injection of electrons from Si step-doped GaN barrier layers into the well also increase in the hole accumulation due to higher valance band offset of barriers. In theory, for subband calculations we solved Schrodinger-Poisson equations self-consistently by numerov method where the Exchange-correlation, Hartree interaction and internal electric fields were considered for accurate subbands calculation.

Typ des Eintrags: Artikel
Erschienen: 2014
Autor(en): Alaei, H. R. ; Riedel, Ralf ; Younesi, M.
Titel: Intersubband transitions under strong screening effect of five carriers in the step doped InGaN/GaN Quantum Well
Sprache: Englisch
Kurzbeschreibung (Abstract):

We report on the intersubband transitions at different temperatures in the InGaN/GaN Quantum Well (QW) where they have two couple thick layers with step doping around their active region. These couple step doped layers by strong screening effect of free carriers can reduce the Quantum Confined Stark Effect (QCSE) induced by strain in the QW then blue shifts as large as 70 meV for intersubband transitions is observed at room temperature. The such improvement in optical property is attributed to an increase in the injection of electrons from Si step-doped GaN barrier layers into the well also increase in the hole accumulation due to higher valance band offset of barriers. In theory, for subband calculations we solved Schrodinger-Poisson equations self-consistently by numerov method where the Exchange-correlation, Hartree interaction and internal electric fields were considered for accurate subbands calculation.

Titel der Zeitschrift, Zeitung oder Schriftenreihe: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
Band: 16
(Heft-)Nummer: 1-2
Verlag: NATL INST OPTOELECTRONICS, 1 ATOMISTILOR ST, PO BOX MG-5, BUCHAREST-MAGURELE 76900, ROMANIA
Freie Schlagworte: Intersubband, Transition, Quantum Well, InGaN/GaN, Self-consistent, Photoluminescence
Fachbereich(e)/-gebiet(e): Fachbereich Material- und Geowissenschaften > Materialwissenschaften > Disperse Feststoffe, Dispersive Solids
Fachbereich Material- und Geowissenschaften > Materialwissenschaften
Fachbereich Material- und Geowissenschaften
Hinterlegungsdatum: 25 Apr 2014 08:44
Sponsoren: Islamic Azad University, Varamin-Pishva Branch
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